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ON Semiconductor |
IGBT a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar application |
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Toshiba Semiconductor |
7ch Darlington Sink Driver z Output current (single output): 500 mA max z High sustaining voltage output: 50 V min z Output clamp diodes z Inputs compatible with various types of logic z Package Type-APG: DIP-16pin z Package Type-AFWG: SOL-16pin ULN2003APG ULN2004APG ULN2003A |
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Toshiba Semiconductor |
7ch Darlington Sink Driver z Output current (single output): 500 mA max z High sustaining voltage output: 50 V min z Output clamp diodes z Inputs compatible with various types of logic z Package Type-APG: DIP-16pin z Package Type-AFWG: SOL-16pin ULN2003APG ULN2004APG ULN2003A |
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Toshiba Semiconductor |
8ch Darlington Sink Driver • Output current (single output) 500 mA (max) • High sustaining voltage output 50 V (min) • Output clamp diodes • Inputs compatible with various types of logic. • Package Type−APG : DIP−18pin • Package Type−AFWG : SOP−18pin ULN2803APG ULN28 |
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Toshiba Semiconductor |
7CH DARLINGTON SINK DRIVER Output current (single output): 500 mA (max) High sustaining voltage output: 50 V (min) Output clamp diodes Inputs compatible with various types of logic Package Type-AP: DIP-16pin Package Type-AFW: SOL-16pin Type ULN2003AP/AFW ULN2004AP/AFW Input |
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ON Semiconductor |
Darlington Transistor Arrays http://onsemi.com MARKING DIAGRAMS 16 1 SOIC-16 D SUFFIX CASE 751B 1 Pin 9 A WL Y WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package 16 ULQ2003AG AWLYWW 1 16 ULN2003AG AWLYWW •ăThese are Pb-Free Devices 1/7 ULx2003A 2.7 k 5.0 |
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Powerex Power Semiconductors |
Dual Darlington Transistor |
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Toshiba Semiconductor |
7CH DARLINGTON SINK DRIVER Output current (single output): 500 mA (max) High sustaining voltage output: 50 V (min) Output clamp diodes Inputs compatible with various types of logic Package Type-AP: DIP-16pin Package Type-AFW: SOL-16pin Type ULN2003AP/AFW ULN2004AP/AFW Input |
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ON Semiconductor |
High Current Darlington Transistor Arrays http://onsemi.com 16 1 PDIP−16 P SUFFIX CASE 648 • Pb−Free Packages are Available* • NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes 1/7 MC1413, B 2.7 k 5.0 k 3.0 k www.DataSheet4U.com 16 1 SOIC−16 D SUFFIX CA |
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Integrated Power Semiconductors |
(ULN2xxx) Darlington Transistor Arrays |
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Comset Semiconductors |
NPN SILICON POWER DARLINGTONS TRANSISTORS 5°C unless otherwise noted Symbol ICEO Ratings Collector Cutoff Current IB= 0 Emitter Cutoff Current IC= 0 Collector Cutoff Current IE= 0 Collector-Emitter Sustaining IB= 0 Test Condition(s) Min 60 80 100 1000 500 Typ - Max 2 Unit mA VCE= 30 |
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Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS YP ICBO VCB=Rated VCBO ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=30mA (TIP140, TIP145) 60 BVCEO IC=30mA (TIP141, TIP146) 80 BVCEO IC=30mA (TIP142, TIP147) 100 VCE(SAT) IC=5.0A, IB=10mA VCE(SAT) IC=10A, IB=40mA VBE(ON) VCE=4.0V, I |
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Micrel Semiconductor |
High-Voltage High-Current Darlington Array inputs compatible with 5V TTL and CMOS logic while the MIC2804 features inputs compatible with 6V to 15V CMOS or PMOS logic outputs. The MIC2803/4 is available in 18-pin plastic DIP and wide SOIC packages in the –40°C to +85°C temperature range. Fea |
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Fairchild Semiconductor |
PNP Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP120 / TIP121 / TIP122 Equivalent Circuit C B Ordering Information 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Part Number TIP125 TIP125TU TIP126 TIP126TU TIP127 TIP127TU |
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Toshiba Semiconductor |
8CH DARLINGTON SINK DRIVER l Output current (single output) 500 mA (Max.) l High sustaining voltage output 50 V (Min.) l Output clamp diodes l Inputs compatible with various types of logic. l Package Type−AP : DIP−18pin l Package Type−AFW : SOL−18pin Weight DIP18−P−30 |
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Comset Semiconductors |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ataSheet4U.co.kr/ NPN BDX33 – BDX33A – BDX33B – BDX33C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 |
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Comset Semiconductors |
PNP SILICON DARLINGTONS POWER TRANSISTOR ymbol Ratings Test Condition(s) BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A Min 60 80 100 120 - Typ 2000 Max 3 Unit -VCEO(SUS) Collector-Emitter Breakdown -IC=0.1 A L=25mH Voltage (*) -VCE=30 |
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Comset Semiconductors |
NPN SILICON POWER DARLINGTONS TRANSISTORS ACTERISTICS TC=25°C unless otherwise noted Symbol ICEO Ratings Collector Cutoff Current IB= 0 Emitter Cutoff Current IC= 0 Collector Cutoff Current IE= 0 Collector-Emitter Sustaining IB= 0 Test Condition(s) VCE= -30 V VCE= -40 V VCE= -50 V VBE= -5 |
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Fairchild Semiconductor |
LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS • • • • • • • Low current - 0.5 mA Superior CTR-2000% Superior CMR-10 kV/µs Double working voltage-480V RMS CTR guaranteed 0-70°C U.L. recognized (File # E90700) Dual Channel - HCPL-2730 HCPL-2731 APPLICATIONS • • • • • • Digital logic ground isolat |
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Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS YP ICBO VCB=Rated VCBO ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=30mA (TIP140, TIP145) 60 BVCEO IC=30mA (TIP141, TIP146) 80 BVCEO IC=30mA (TIP142, TIP147) 100 VCE(SAT) IC=5.0A, IB=10mA VCE(SAT) IC=10A, IB=40mA VBE(ON) VCE=4.0V, I |
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Desde 2024. D4U Semiconductor.
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