| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
Internally Compensated Dual Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS • Input Noise Voltage: 5.0 nVń ǸHz (Typical) • DC Voltage Gain: 50000 • AC Voltage Gain: 2200 at 10 kHz • Power Bandwidth: 140 kHz • Slew R |
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Fairchild Semiconductor |
Dual Operational Amplifier • Internal Frequency Compensation • Slew Rate: 8V/μs • Input Noise Voltage: 8nV ⁄ Hz (fo = 30Hz) • Full Power Bandwidth: 140kHz Description The NE5532 is a internally compensated dual low noise OP-AMP. The high small signal and power bandwidth provi |
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ON Semiconductor |
Internally Compensated Dual Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS • Input Noise Voltage: 5.0 nVń ǸHz (Typical) • DC Voltage Gain: 50000 • AC Voltage Gain: 2200 at 10 kHz • Power Bandwidth: 140 kHz • Slew R |
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ON Semiconductor |
Dual Operational Transconductance Amplifier • Constant Impedance Buffers • DVBE of Buffer is Constant with Amplifier IBIAS Change • Excellent Matching Between Amplifiers • Linearizing Diodes • High Output Signal-to-Noise Ratio • This is a Pb−Free Device Applications • Multiplexers • Timers • E |
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ON Semiconductor |
Single Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS at VS = "18 V • Input Noise Voltage: 4 nVń ǸHz • DC Voltage Gain: 100000 • AC Voltage Gain: 6000 at 1 |
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Fairchild Semiconductor |
Single Timer • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stability of 0.005%/°C • Timing From µSec to Hours • Turn off Time Less Than 2µSec Applications • Precision Timing • Pulse Generation • Time Delay Generation • Sequential T |
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Ideal Semiconductor |
Servo Amplifier |
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Fairchild Semiconductor |
Single Timer • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stability of 0.005%/°C • Timing From µSec to Hours • Turn off Time Less Than 2µSec Applications • Precision Timing • Pulse Generation • Time Delay Generation • Sequential T |
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ON Semiconductor |
Low Voltage Operational Amplifier • Works Down to 1.8 V Supply Voltages • Adjustable Supply Current • Low Noise • Common−mode Includes Both Rails • VOUT Within 100 mV of Both Rails • These are Pb−Free Devices Applications • Portable Precision Instruments • Remote Transducer Amplifier |
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ON Semiconductor |
Dual Operational Transconductance Amplifier • Constant Impedance Buffers • DVBE of Buffer is Constant with Amplifier IBIAS Change • Excellent Matching Between Amplifiers • Linearizing Diodes • High Output Signal-to-Noise Ratio • This is a Pb−Free Device Applications • Multiplexers • Timers • E |
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Ideal Semiconductor |
Seven-Channel RC Decoder |
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ON Semiconductor |
Video Amplifier • 120 MHz Unity Gain Bandwidth • Adjustable Gains from 0 to 400 • Adjustable Pass Band • No Frequency Compensation Required • Wave Shaping with Minimal External Components • MIL-STD Processing Available • These D |
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ON Semiconductor |
High-Speed Dual-Differential Comparator/Sense Amp • • • • TTL-Compatible Strobes and Outputs Large Common-Mode Input Voltage Range Operates from Standard Supply Voltages Pb−Free Packages are Available http://onsemi.com MARKING DIAGRAMS 14 1 SOIC−14 D SUFFIX CASE 751A 1 NE521G AWLYWW Applications |
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ON Semiconductor |
Single Low Noise Operational Amplifier • Small-Signal Bandwidth: 10 MHz • Output Drive Capability: 600 W, 10 VRMS at VS = "18 V • Input Noise Voltage: 4 nVń ǸHz • DC Voltage Gain: 100000 • AC Voltage Gain: 6000 at 10 kHz • Power Bandwidth: 200 kHz • Slew Rate: 13 V/ms • Large Supply Volta |
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ON Semiconductor |
Compandor http://onsemi.com MARKING DIAGRAM 16 • • • • • • • • • • • • • • Complete Compressor and Expandor in One IC Temperature Compensated Greater than 110 dB Dynamic Range Operates Down to 6.0 VDC System Levels Adjustable with External Components Distor |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET y N-Channel y Enhancement mode y Very low on-resistance RDS(on) @ VGS=4.5 V y Fast Switching y High conversion efficiency y Pb-free lead plating; RoHS compliant VSO025NE5MS 58V/10A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5 V ID 58 |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET y N-Channel y Enhancement mode y Very low on-resistance RDS(on) @ VGS=4.5 V y Fast Switching y High conversion efficiency y Pb-free lead plating; RoHS compliant VSD025NE5MS 58V/30A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5 V ID 58 |
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Ideal Semiconductor |
LVDT Signal Conditioner |
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ON Semiconductor |
High-Speed Dual-Differential Comparator/Sense Amp • 15 ns Maximum Guaranteed Propagation Delay • 20 mA Maximum Input Bias Current • TTL-Compatible Strobes and Outputs • Large Common-Mode Input Voltage Range • Operates from Standard Supply Voltages Applications • MOS Memory Sense Amp • A-to-D Convers |
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Motorola Semiconductor |
Video Amplifier |
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Desde 2024. D4U Semiconductor.
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