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Naina Semiconductor |
Diode/Diode Module Diode/Diode Module, 60A • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance NDD57A Voltage Ratings (TA = 25oC, unless otherwise noted) Type n |
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ON Semiconductor |
N-Channel Power MOSFET www.DataSheet4U.com • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com VDSS 500 V RDS(on) (TYP) @ 2.2 A 1.25 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise n |
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ON Semiconductor |
N-Channel Power MOSFET • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF NDD U |
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Naina Semiconductor |
Diode/Diode Module Diode/Diode Module, 47A • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance NDD46A Voltage Ratings (TA = 25oC, unless otherwise noted) Type n |
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Naina Semiconductor |
Diode/Diode Module Diode/Diode Module, 130A • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance NDD132C Voltage Ratings (TA = 25oC, unless otherwise noted) Type |
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Naina Semiconductor |
Diode-Diode • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 40NDD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward 0 |
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Naina Semiconductor |
Diode-Diode • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 and M2 package 100NDD Maximum Ratings (TA = 250C unless otherwise not |
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ON Semiconductor |
N-Channel Power MOSFET • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (No |
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ON Semiconductor |
N-Channel Power MOSFET • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (No |
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ON Semiconductor |
N-Channel Power MOSFET • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (No |
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Naina Semiconductor |
Diode/Diode Module Diode/Diode Module, 31A • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance NDD26A Voltage Ratings (TA = 25oC, unless otherwise noted) Type n |
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Naina Semiconductor |
Diode/Diode Module Diode/Diode Module, 100A • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance NDD100B Voltage Ratings (TA = 25oC, unless otherwise noted) Type |
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Naina Semiconductor |
Diode/Diode Module Diode/Diode Module, 160A • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance NDD160C Voltage Ratings (TA = 25oC, unless otherwise noted) Type |
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ON Semiconductor |
N-Channel Power MOSFET • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Un |
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ON Semiconductor |
N-Channel Power MOSFET • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage CStoenatdinyuSoutasteD, rTaCin=C2 |
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Naina Semiconductor |
Diode-Diode Module Diode-Diode Module, 195 Amps • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Voltage Ratings (TA = 25oC, unless otherwise noted) Type numb |
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Naina Semiconductor |
Diode-Diode Module Diode-Diode Module, 212 Amps • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Voltage Ratings (TA = 25oC, unless otherwise noted) Type numb |
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Pericom Semiconductor |
3.3V CMOS Low-Jitter 133.330 MHz DDR XO |
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ON Semiconductor |
Power MOSFET High Speed Switching Low Gate Charge ESD Diode-Protected Gate 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Electrical Connection 2,4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain t |
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ON Semiconductor |
N-Channel Power MOSFET on and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reli |
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Desde 2024. D4U Semiconductor.
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