| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
Isolated Dual Channel IGBT/MOSFET Gate Driver • High Peak Output Current (±6.5 A*, ±3.5 A*) • Configurable as a Dual Low−Side or Dual High−Side or Half−Bridge Driver • Programmable Overlap or Dead Time control • Disable Pin to Turn Off Outputs for Power Sequencing • ANB Function to Offer Flexibi |
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ON Semiconductor |
Isolated High Current IGBT Gate Driver include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off at DESAT. NCD57001 accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the |
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ON Semiconductor |
IGBT/MOSFET Gate Driver • High Peak Output Current (+6.5 A/−6.5 A) • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F) • Short Propagation Delays with Accurate Matching • IGBT/MOSFET Gate Clamping during Sho |
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ON Semiconductor |
Isolated Dual Channel IGBT Gate Driver • High Peak Output Current (±6.5 A) • Configurable as a Dual Low−Side or Dual High−Side or Half−Bridge Driver • Programmable Overlap or Dead Time control • Disable Pin to Turn Off Outputs for Power Sequencing (NCx57540) • Enable Pin for Independent D |
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ON Semiconductor |
Isolated High Current IGBT Gate Driver • High Peak Output Current (+6.5 A/−6.5 A) • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A) • Short Propagation Delays with Accurate Matching • IGBT/MOSFET Gate Clamping during Short C |
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ON Semiconductor |
High Current IGBT Gate Driver include Active Miller Clamp, accurate UVLO, EN input, DESAT protection and Active open−drain FAULT output. The driver also features an accurate 5.0 V output and separate high and low (VOH and VOL) driver outputs for system design convenience. The dri |
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ON Semiconductor |
High Current IGBT/MOSFET Gate Drivers include accurate Under−voltage−lockout (UVLO), desaturation protection (DESAT) and Active open−drain FAULT output. The drivers also feature an accurate 5.0 V output. The drivers are designed to accommodate a wide voltage range of bias supplies. NCx57 |
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ON Semiconductor |
Gate Driver IGBT • High Peak Output Current (+7A/−7 A) • Low Output Impedance for Enhanced IGBT Driving • Short Propagation Delays with Accurate Matching • IGBT Over Current Protection • Negative Voltage (Down to −9 V) Capability for CS Pin • IGBT Gate Clamping durin |
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Toshiba Semiconductor |
VARIABLE CAPACITANCD DIODE 14.16 ¾ 16.25 2.11 ¾ 2.43 5.90 6.50 7.15 ¾ 0.4 0.55 V nA pF pF ¾ W 1 2003-04-02 1SV278 CAPACITANCE CHANGE RATIO @C (%) (Note 2) Note 2: dC = C (Ta) - C (25) C (25) ´ 100 (%) 2 2003-04-02 1SV278 RESTRICTIONS ON PRODUCT USE 000707EAA · |
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Toshiba Semiconductor |
VARIABLE CAPACITANCD DIODE mm JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C1 V |
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ON Semiconductor |
High Current IGBT Gate Drivers include accurate Under−voltage−lockout (UVLO), desaturation protection (DESAT) and Active Low FAULT output. The drivers also feature an accurate 5.0 V output. The drivers are designed to accommodate a wide voltage range of bias supplies including uni |
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ON Semiconductor |
High Current IGBT Gate Drivers include accurate Under−voltage−lockout (UVLO), desaturation protection (DESAT) and Active Low FAULT output. The drivers also feature an accurate 5.0 V output. The drivers are designed to accommodate a wide voltage range of bias supplies including uni |
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ON Semiconductor |
Isolated High Current IGBT Gate Driver • High Peak Output Current (+6.5 A/−6.5 A) • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A) • Short Propagation Delays with Accurate Matching • IGBT/MOSFET Gate Clamping during Short C |
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ON Semiconductor |
Isolated High Current IGBT Gate Driver • High Peak Output Current (+6.5 A/−6.5 A) • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A) • Short Propagation Delays with Accurate Matching • IGBT/MOSFET Gate Clamping during Short C |
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ON Semiconductor |
High Current IGBT Gate Driver include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off at DESAT. NCD57001F accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on th |
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ON Semiconductor |
IGBT/MOSFET Gate Driver • High Peak Output Current (+6.5 A/−6.5 A) • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F) • Short Propagation Delays with Accurate Matching • IGBT/MOSFET Gate Clamping during Sho |
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ON Semiconductor |
IGBT/MOSFET Gate Driver • High Peak Output Current (+6.5 A/−6.5 A) • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F) • Short Propagation Delays with Accurate Matching • IGBT/MOSFET Gate Clamping during Sho |
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ON Semiconductor |
IGBT/MOSFET Gate Driver • High Peak Output Current (+6.5 A/−6.5 A) • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F) • Short Propagation Delays with Accurate Matching • IGBT/MOSFET Gate Clamping during Sho |
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ON Semiconductor |
IGBT/MOSFET Gate Driver • High Peak Output Current (+6.5 A/−6.5 A) • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F) • Short Propagation Delays with Accurate Matching • IGBT/MOSFET Gate Clamping during Sho |
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ON Semiconductor |
High Current IGBT Gate Drivers include accurate Under−voltage−lockout (UVLO), desaturation protection (DESAT) and Active open−drain FAULT output. The drivers also feature an accurate 5.0 V output. The drivers are designed to accommodate a wide voltage range of bias supplies includ |
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Desde 2024. D4U Semiconductor.
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