| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Alliance Semiconductor |
128M (8M x 16) Low Power SDRAM - Functionality - Standard SDRAM Functionality - Programmable burst lengths : 1, 2, 4, 8 or full page - 64ms refresh period (4K cycle) - JEDEC Compatibility - Low Power Features - Auto TCSR(Temperature Compensated Self Refresh) - Partial Array Self R |
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Fairchild Semiconductor |
Selectable RGB (YUV) HD/SD Video Filter Driver with Y/ C/ Composite Outputs • Three channel video reconstruction filters • YUV/RGB filters • 2:1 Mux inputs for multiple RGB/YUV inputs • Selectable 8MHz or 30MHz 6th order filters for RGB (YUV) applications • 8MHz 6th order Y, C filters with composite summer • DC coupled input, AC |
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Fairchild Semiconductor |
Selectable RGB (YUV) HD/SD Video Filter Driver with Y/ C/ Composite Outputs • Three channel video reconstruction filters • YUV/RGB filters • 2:1 Mux inputs for multiple RGB/YUV inputs • Selectable 8MHz or 30MHz 6th order filters for RGB (YUV) applications • 8MHz 6th order Y, C filters with composite summer • DC coupled input, AC |
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ON Semiconductor |
(MSA1162GT1 / MSA1162YT1) General Purpose Amplifier Transistors 45 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) MSA1162 YT1 MSA1162GT1 Collector−Emitter Saturation Voltage (IC = |
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Micron Semiconductor Products |
Glass Passivated Rectifier y y y Blocking voltage:800 to 1600V Heat transfer through aluminum oxide ceramic isolated metal baseplate Glass passivated chip 3 Module Type TYPE MSKD36-08 MSKD36-12 MSKD36-16 MSAD36-08 MSAD36-12 MSAD36-16 MSCD36-08 MSCD36-12 MSCD36-16 VRRM 800 |
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NXP Semiconductors |
Dual 14-bit up to 160 Msample/s 2 interpolating Digital-to-Analog Converter I I I I I I I I I I Dual 14-bit resolution SFDR = 80 dBc at 2.5 MHz Input data rate up to 80 Msample/s 2 × interpolation filter Output data rate up to 160 Msample/s Single 3.3 V power supply Low noise capacitor-free integrated PLL Low power dissipatio |
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ON Semiconductor |
(MSA1162GT1 / MSA1162YT1) General Purpose Amplifier Transistors 45 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) MSA1162 YT1 MSA1162GT1 Collector−Emitter Saturation Voltage (IC = |
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Desde 2024. D4U Semiconductor.
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