| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Siemens Semiconductor Group |
PLL-Frequency Synthesizer PMB2306R/PMB2306T Version 2.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Pin Definitions and Function |
|
|
|
|
ON Semiconductor |
600 Watt Peak Power Zener Transient Voltage Suppressors • Working Peak Reverse Voltage Range − 5.8 to 171 V • Standard Zener Breakdown Voltage Range − 6.8 to 200 V • Peak Power − 600 W @ 1 ms • ESD Rating of Class 3 (>16 kV) per Human Body Model • Maximum Clamp Voltage @ Peak Pulse Current • Low Leakage |
|
|
|
|
Siemens Semiconductor Group |
PLL-Frequency Synthesizer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Pin Definitions and Function |
|
|
|
|
Fairchild Semiconductor |
PNP Multi-Chip General Purpose Amplifier Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max FMB200 700 5.6 180 Units mW mW/°C °C/W © 1998 Fairchild Semiconductor Corporation FMB200 PNP Multi-Chip General Purpose Amplifier (continued) Electrical Character |
|
|
|
|
Fairchild Semiconductor |
NPN Amplifier 2222A — NPN Multi-Chip General-Purpose Amplifier Ordering Information Part Number FFB2222A FMB2222A MMPQ2222A Top Mark .1P .1P MMPQ2222A Package SC70 6L SSOT 6L SOIC 16L Packing Method Tape and Reel Tape and Reel Tape and Reel Absolute Maximum R |
|
|
|
|
Fairchild Semiconductor |
PNP Multi-Chip General Purpose Amplifier e consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Ef |
|
|
|
|
General Semiconductor |
SURFACE MOUNT AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) 0.008 (0.203) MAX. ♦ Plastic package has Underwriters Labora |
|
|
|
|
Fairchild Semiconductor |
MOSFET Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm HBM ESD protection level 2.8 kV (Note 3) RoHS Compliant General Descrip |
|
|
|
|
ON Semiconductor |
0.5A Bridge Rectifiers make the MB family ideal for small power supplies that need a little extra surge capability. For higher IFAV current ratings, lower profile packaging, or lower VF values, explore the onsemi MDB family of bridge rectifiers. For improved VF and efficie |
|
|
|
|
Fairchild Semiconductor |
0.5A Bridge Rectifiers • Low-Leakage • Surge Overload Rating: 35 A peak • Ideal for Printed Circuit Board • UL Certified: UL #E258596 SOIC-4 Polarity symbols molded or mark on body 43 ~~ ++ ~+ ~- 12 Ordering Informations Part Number MB1S MB2S MB4S MB6S MB8S Marking MB1 |
|
|
|
|
Siemens Semiconductor |
GSM Receiver Circuit q Heterodyne receiver with demodulator q Down mixing from 900 MHz receiver band to the base q q q q q q q q q q q q band Demodulation and generation of I/Q-baseband components Low mixer noise 10 dB (SSB) Input high intercept point + 2 dB Integrated |
|
|
|
|
NXP Semiconductors |
Dual octal transparent latch 3-State • 16-bit transparent latch • Multiple VCC and GND pins minimize switching noise DESCRIPTION The MB2373 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The MB2373 device is a du |
|
|
|
|
Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - Compliant to RoHS Directive 2011/65/EU |
|
|
|
|
Taiwan Semiconductor |
Fast Recovery Bridge Rectifier ● AEC-Q101 qualified available ● Ideal for automated placement ● Reliable low cost construction utilizing molded plastic technique ● High surge current capability ● UL Recognized File # E-326854 ● Moisture sensitivity level: level 1, per J-STD-020 ● |
|
|
|
|
ON Semiconductor |
Dual P-Channel MOSFET two common drain P−channel MOSFETs, which enables bidirectional current flow, on onsemi’s advanced POWERTRENCH process with state of the art MircoFET t Leadframe, the FDMB2308PZ minimizes both PCB space and rS1S2(on). Features • Max rS1S2(on) = 36 mW |
|
|
|
|
Central Semiconductor |
SILICON BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TVS LEAKAGE CURRENT IR @ VRWM µA 1SMB5.0CA 5.0 6.40 7.25 10 1600 1SMB6.0CA 6.0 6.67 7.67 10 1600 1SMB6.5CA 6.5 7.22 8.30 10 1000 1SMB7.0CA 7.0 7.78 8.95 10 400 1SMB7.5CA 7.5 8.33 9.58 1.0 200 1SMB8.0CA 8.0 8.89 10.23 1.0 100 |
|
|
|
|
Central Semiconductor |
SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS |
|
|
|
|
Central Semiconductor |
SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS |
|
|
|
|
Fairchild Semiconductor |
NPN & PNP Complementary Dual Transistor unless otherwise noted Test Conditions Ic = 10 mA Ic = 10 uA Ie = 10 uA Min 30 60 5 Max Units V V V © 1998 Fairchild Semiconductor Corporation Page 1 of 2 2227A.lwpPr19&63(Y1) FMB2227A NPN & PNP Complementary Dual Transistor (continued) El |
|
|
|
|
Central Semiconductor |
TRANSIENT VOLTAGE SUPPRESSORS |
|
Desde 2024. D4U Semiconductor.
|