No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
Low Leakage Diode be affected. 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. THERMAL CHARACTERISTICS Symbol Parameter PD RqJA Power Dissipation Linear Derating Factor from TA = 25°C Thermal Resis |
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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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Taiwan Semiconductor Company |
(LL4933G - LL4937G) 1.0 AMP Surface Mount Glass Passivated Silicon Rectifiers Plastic package has carries underwriters laboratory flammability classification 94V-0. Surge overload rating to 30 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive p |
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General Semiconductor |
Schottky Diodes ♦ For general purpose applications. ♦ These diodes feature very low turn∅ .063 (1.6) .055 (1.4) Cathode Mark on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis |
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General Semiconductor |
Schottky Diodes ♦ For general purpose applications. ♦ These diodes feature low turn-on volt∅ .063 (1.6) .055 (1.4) Cathode Mark age and high break-down voltage. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostati |
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Central Semiconductor Corp |
SURFACE MOUNT LOW LEAKAGE SILICON DIODE LL457A CLL459A SURFACE MOUNT LOW LEAKAGE SILICON DIODE Semiconductor Corp. SOD-80 - MECHANICAL OUTLINE R2 ( 21-August 2001) |
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Central Semiconductor |
SURFACE MOUNT LOW LEVEL SILICON ZENER DIODES |
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Central Semiconductor |
SURFACE MOUNT LOW LEVEL SILICON ZENER DIODES |
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Central Semiconductor |
SURFACE MOUNT LOW LEVEL SILICON ZENER DIODES |
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ON Semiconductor |
Small Signal Diode and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel DATA SHEET www.onsemi.com DO−35 Cathode is denoted with a black band Cathode Band SOD80 LL−34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO TH |
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Taiwan Semiconductor Company |
(LL4933G - LL4937G) 1.0 AMP Surface Mount Glass Passivated Silicon Rectifiers Plastic package has carries underwriters laboratory flammability classification 94V-0. Surge overload rating to 30 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive p |
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ON Semiconductor |
Small Signal Diode • This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) (Notes 1 and 2) Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diodes ♦ Fast switching diode in MiniMELF case especially suited for automatic insertion. ∅ .063 (1.6) .055 (1.4) Cathode Mark ♦ This diode is also available in other case styles .142 (3.6) .134 (3.4) .019 (0.48) .011 ( |
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Diotec Semiconductor |
Surface Mount Silicon Planar Diodes 50 mA2) 500 mA2) 2000 mA LL 4150 300 mA2) 600 mA2) 4000 mA 500 mW 2) - 50…+ 175/C - 50…+ 175/C LL 4151 200 mA2) 500 mA2) 2000 mA Operating junction temp. – Sperrschichttemp. Storage temperature – Lagerungstemperatur 1 2 ) Tested with 100 :A puls |
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General Semiconductor |
Schottky Diodes ♦ For general purpose applications. ♦ These diodes feature very low turn∅ .063 (1.6) .055 (1.4) Cathode Mark on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diode ♦ Fast switching diode in MiniMELF case ∅ .063 (1.6) .055 (1.4) especially suited for automatic insertion. styles including: the DO-35 case with the type designation 1N4448, the SOD-123 case with the type designation |
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Diotec Semiconductor |
Surface Mount Silicon Planar Diodes 50 mA2) 500 mA2) 2000 mA LL 4150 300 mA2) 600 mA2) 4000 mA 500 mW 2) - 50…+ 175/C - 50…+ 175/C LL 4151 200 mA2) 500 mA2) 2000 mA Operating junction temp. – Sperrschichttemp. Storage temperature – Lagerungstemperatur 1 2 ) Tested with 100 :A puls |
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General Semiconductor |
Schottky Diodes ♦ For general purpose applications. ♦ These diodes feature low turn-on volt∅ .063 (1.6) .055 (1.4) Cathode Mark age and high break-down voltage. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostati |
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Central Semiconductor Corp |
SURFACE MOUNT LOW LEAKAGE SILICON DIODE LL457A CLL459A SURFACE MOUNT LOW LEAKAGE SILICON DIODE Semiconductor Corp. SOD-80 - MECHANICAL OUTLINE R2 ( 21-August 2001) |
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Central Semiconductor |
SURFACE MOUNT LOW LEVEL SILICON ZENER DIODES |
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