ON Semiconductor LF4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	LF412	National Semiconductor	Low Offset/ Low Drift Dual JFET Input Operational Amplifier n n n n n n n n n n n Internally trimmed offset voltage: 1 mV (max) Input offset voltage drift: 10 µV/˚C (max) Low input bias current: 50 pA Low input noise current: Wide gain bandwidth: 3 MHz (min) High slew rate: 10V/µs (min) Low supply current: 1.
2	LF442	National Semiconductor	Dual Low Power JFET Input Operational Amplifier n n n n n n n n n n 1/10 supply current of a LM1458: 400 µA (max) Low input bias current: 50 pA (max) Low input offset voltage: 1 mV (max) Low input offset voltage drift: 10 µV/˚C (max) High gain bandwidth: 1 MHz High slew rate: 1 V/µs Low noise volt
3	LF411	National Semiconductor	Low Offset/ Low Drift JFET Input Operational Amplifier Internally trimmed offset voltage: 0.5 mV(max) Input offset voltage drift: 10 µV/˚C(max) Low input bias current: 50 pA Low input noise current: Wide gain bandwidth: 3 MHz(min) High slew rate: 10V/µs(min) Low supply current: 1.8 mA High input impedanc
4	LF444C	ON Semiconductor	LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS
5	LF441C	ON Semiconductor	LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products and output swing. The LF441C device provides for the external null adjustment of input offset v
6	LF444	National Semiconductor	Quad Low Power JFET Input Operational Amplifier n n n n n 1⁄4 supply current of a LM148: 200 µA/Amplifier (max) Low input bias current: 50 pA (max) High gain bandwidth: 1 MHz High slew rate: 1 V/µs Low noise voltage for low power n Low input noise current n High input impedance: 1012Ω n High gai
7	LF451	National Semiconductor	LF451 Wide-Bandwidth JFET-Input Operational Amplifier Y Y Y Y Y Y Y Y Y Y Internally trimmed offset voltage 5 0 mV (max) Low input bias current 50 pA (typ) Low input noise current 0 01 pA 0Hz (typ) Wide gain bandwidth 4 MHz (typ) High slew rate 13 V ms (typ) Low supply current 3 4 mA (max) High input
8	LF401	National Semiconductor	PRECISION FAST SETTLING JFET INPUT OPERATIONAL AMPLIFIER
9	LF401A	National Semiconductor	PRECISION FAST SETTLING JFET INPUT OPERATIONAL AMPLIFIER
10	LF453	National Semiconductor	LF453 Wide-Bandwidth Dual JFET-Input Operational Amplifiers Y Y Y Y Y Y Y Y Y Y Internally trimmed offset voltage Low input bias current Low input noise current Wide gain bandwidth High slew rate Low supply current High input impedance Low total harmonic distortion AV e 10 RL e 10k VO e 20 Vp – p f e 20 Hz –
11	SLF4N65S	Maple Semiconductor	N-Channel MOSFET - 4.0A, 650V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N65S
12	SLF4N70C	Maple Semiconductor	700V N-Channel MOSFET - 3.5A, 700V, RDS(on)typ. = 3.0Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwis
13	SLF40N26C	Maple Semiconductor	260V N-Channel MOSFET - 40A, 260V, RDS(on) typ. = 0.12Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4
14	HYMD264G726BLF4-J	Hynix Semiconductor	Registered DDR SDRAM DIMM • • • • • • • 512MB (64M x 72) Registered DDR DIMM based on 64Mx4 DDR SDRAM JEDEC Standard 184-pin dual in-line memory module (DIMM) Error Check Correction (ECC) Capability Registered inputs with one-clock delay Phase-lock loop (PLL) clock driver to
15	LF441	National Semiconductor	Low Power JFET Input Operational Amplifier Y 1 10 supply current of a LM741 Y Low input bias current Y Low input offset voltage Y Low input offset voltage drift Y High gain bandwidth Y High slew rate Y Low noise voltage for low power Y Low input noise current Y High input impedance Y High gai
16	SLF4N65UZ	Maple Semiconductor	N-Channel MOSFET - 4A, 650V, RDS(on)typ = 2.32Ω@VGS = 10 V - Low gate charge ( typical 10.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise
17	SLF4N65C	Maple Semiconductor	N-Channel MOSFET - 4A, 650V, RDS(on)typ. = 2.32Ω@VGS = 10 V - Low gate charge ( typical 13nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise
18	SLF4N60C	Maple Semiconductor	N-Channel MOSFET - 4.5A, 600V, RDS(on)typ. = 2Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise