| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • rDS(ON) = 92mΩ (Typ.), VGS = 5V, ID = 10A • Qg(tot) = 4.2nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83524 Applications • Mot |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A • Qg(tot) = 25nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant December 2010 Applications • Motor |
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National Semiconductor |
2 Watt Audio Power Amplifier with Selectable Shutdown Logic Level a low-power consumption shutdown mode. To facilitate this, Shutdown may be enabled by either logic high or low depending on mode selection. Driving the shutdown mode pin either high or low enables the shutdown pin to be driven in a likewise manner to |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 20mΩ (Typ.), VGS = 5V, ID = 36A • Qg(tot) = 16nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83547 Applications • Mot |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 20mΩ (Typ.), VGS = 5V, ID = 36A • Qg(tot) = 16nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83547 Applications • Mot |
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ON Semiconductor |
Ambient Light Sensor Smallest OD-CSP package in the world (1.01mm x 1.01mm x thickness: 0.6mm) Low variation and Optical Output Current in low temperature fluctuation. Integrated Sleep function. Low current consumption. Typical Applications Mobile phones and ta |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos |
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NXP Semiconductors |
Avionics LDMOS power transistor and benefits High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 Applications Avionics transmitter applications in the 960 MHz to 1215 MHz frequency |
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ON Semiconductor |
Ambient Light Sensor Linear current output Low gain mode function [low gain : -35dB] Typical Applications Mobile phones and tablets Digital still cameras Security camera SPECIFICATION ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Parameter Maximum supply vo |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A • Qg(tot) = 25nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83557 Applications • Mo |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 60A • Qg(tot) = 24nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83557 Applications • M |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos |
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Seoul Semiconductor |
Superior high Flux and Benefits • Super high Flux output and high Luminance • 31V typical forward voltage @40mA • Dimension : 5.0x5.0x0.65mm • High Color Quality with CRI Min. 70 • SMT solderable Key Applications • Architectural • Retail Display • Commercial • Industr |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • r DS(ON) = 20mΩ (Typ.), VGS = 5V, ID = 36A • Qg(tot) = 16nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83547 Applications • Mot |
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Taiwan Semiconductor |
Glass Passivated Single Phase Bridge Rectifiers - Glass passivated junction - Ideal for printed circuit board - High case dielectric strength - Typical IR less than 0.1μA - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free ac |
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Taiwan Semiconductor |
Glass Passivated Single Phase Bridge Rectifiers - Glass passivated junction - Ideal for printed circuit board - High case dielectric strength - Typical IR less than 0.1μA - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free ac |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 60A • Qg(tot) = 24nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83557 Applications • M |
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Powerex Power Semiconductors |
Three Phase IGBT Inverter |
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Desde 2024. D4U Semiconductor.
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