| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
2SK3868 (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volta |
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Toshiba Semiconductor |
2SK3869 usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
2SK389 |
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Toshiba Semiconductor |
2SK3842 tinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin |
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Toshiba Semiconductor |
N-Channel MOSFET tinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin |
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ON Semiconductor |
2SK3816 • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS |
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ON Semiconductor |
N-Channel Silicon MOSFET • Low ON-resistance. • 4V drive. • Ultrahigh-speed switching. • Motor drive, DC / DC converter. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Curr |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 56A@ TC=25℃ ·Drain Source Voltage : VDSS= 280V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 61mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 230V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 76mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 84A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DES |
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Siemens Semiconductor |
ARGUS LED q colored, clear package q plasic package with a special design q in connection with an additional, custom built reflector suitable for backlighting of display panels q for optical coupling into light pipes q uniform illumination of a diffuser scree |
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Siemens Semiconductor |
Super ARGUS LED q colored, clear package q plastic package with a special design q appropriate for high ambient light because of the higher operating current (typ. 50 mA) q in connection with an additional, custom built reflector suitable for backlighting of displ |
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Siemens Semiconductor |
LC ARGUS LED q colored, clear package q plasic package with a special design q high light intensity at low currents (typ. 2 mA) q in connection with an additional, custom built reflector suitable for backlighting of display panels q for optical coupling into ligh |
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Toshiba Semiconductor |
CMOS 8-BIT MICROCONTROLLER |
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Inchange Semiconductor |
N-Channel MOSFET Transistor SS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS=10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=10A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Curren |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID= 1A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 VSD Diode Forward Vo |
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Fuji Semiconductors |
Power MOSFET High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc= |
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Toshiba Semiconductor |
TMP87CK38N 4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataShe |
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ON Semiconductor |
N-Channel Power MOSFET • ON-resistance RDS(on)1=45mΩ(typ.) • Input capacitance Ciss=2150pF (typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDS |
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Desde 2024. D4U Semiconductor.
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