ON Semiconductor GA3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	GA3285	ON Semiconductor	Preconfigured DSP System and high performance. The hardware platform is ON Semiconductor’s industry−leading programmable digital signal processing platform. Advanced Research, developed by ON Semiconductor, is a methodology that couples state−of−the−art acoustic algorithms t
2	GA3227	ON Semiconductor	Pre-configured DSP System • Efficient, High Fidelity 1 or 2−Channel WDRC Signal Processing • Fully Programmable via Serial Data Interface • One DLL Operation • Four Trimmer Inputs plus Volume Control or Programmer Controlled • Flexible Trimmer/Parameter Assignments • Three−Te
3	GA301A	Digitron Semiconductors	SILICON CONTROLLED RECTIFIERS  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Repetitive Peak Off State Vo
4	GA301	Digitron Semiconductors	SILICON CONTROLLED RECTIFIERS  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Repetitive Peak Off State Vo
5	GA3216	ON Semiconductor	Pre-configured DSP System • Efficient, High Fidelity 1 or 2−Channel WDRC Signal Processing • Fully Programmable via Serial Data Interface • High−Fidelity Audio Quality • Four Trimmer Inputs plus Volume Control • Flexible Trimmer/Parameter Assignments • Optional Two−Terminal o
6	BGA318	Siemens Semiconductor Group	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) Ω) Insertion power gain \|S21\| 2 ∆ \|S 21\|2 18 16 12 +-0.7 typ. max. Unit dB f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 3.5 4 5 12 14 10 dBm dB f = 0.1 GHz f = 1 GHz f = 2 GHz 1dB compr
7	GA300	Digitron Semiconductors	SILICON CONTROLLED RECTIFIERS  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Repetitive Peak Off State Vo
8	GA300A	Digitron Semiconductors	SILICON CONTROLLED RECTIFIERS  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Repetitive Peak Off State Vo
9	FGA30N60LSD	Fairchild Semiconductor	MOSFETs and bipolar transistors
10	FGA30N65SMD	Fairchild Semiconductor	Field Stop IGBT • Maximum Junction Temperature : TJ =175 C • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.98 V(Typ.) @ IC = 30 A • Fast Switching • Tighten Parameter Distribution • RoHS
11	GA3224	ON Semiconductor	Preconfigured DSP System • Highly Configurable, Versatile DSP Platform • High Quality, Two−channel AGC Signal Processing • High Performance Data Converters – Dual, Over−sampled A/Ds; Over−sampled D/A with Efficient Switched−mode Output Power Amp • High−fidelity Audio Quality
12	GA3284	ON Semiconductor	Preconfigured DSP System and high performance. The Inspiria GA3284’s Adaptive Noise Reduction capability preserves perceived speech levels without causing distortion. It monitors noise levels independently in 128 individual bands. This strategy also employs advanced psychoac
13	GA3219	ON Semiconductor	Pre-configured DSP System and high performance. This hardware platform is ON Semiconductor’s industry−leading programmable digital signal processing platform. Adaptive Algorithms is a methodology developed by ON Semiconductor that couples state−of−the−art acoustic algorithms
14	FGA3060ADF	Fairchild Semiconductor	Field Stop Trench IGBT • Maximum Junction Temperature : TJ = 175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 30 A • 100% of the Parts Tested for ILM(1) • High Input Imped
15	FGA30T65SHD	Fairchild Semiconductor	IGBT • Maximum Junction Temperature : TJ =175oC • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 30 A • 100% of the Parts Tested for ILM(1) • High Input Impeda
16	BGA310	Siemens Semiconductor Group	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) 50 Ω) Insertion power gain \|S21\| 2 ∆ \|S 21\|2 10 9 8 +-0.5 typ. max. Unit dB f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 6 6.5 7 9 20 15 dBm dB f = 0.1 GHz f = 1 GHz f = 2 GHz 1dB compre
17	BGA312	Siemens Semiconductor Group	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) 0 Ω) Insertion power gain \|S21\| 2 ∆ \|S 21\|2 12 11 10 +-0.6 typ. max. Unit dB f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 5.5 6 7 9 20 14 dBm dB f = 0.1 GHz f = 1 GHz f = 2 GHz 1dB compr
18	TGA3504-SM	TriQuint Semiconductor	2 - 30 GHz GaAs Wideband Gain Block  Frequency Range: 2 – 30 GHz  Small Signal Gain: 11.5 dB mid-band  Return Loss: >9 dB  NF: 3.4 dB typical  P1dB: 8 dBm, PSAT = 12 dBm at PIN = 5 dBm  OTOI: 17 dBm at Pout/tone = 5 dBm  Bias: V+ = 5 V (VD = 3 V), IDQ = 50 mA, VG = -1.5 V Typica
19	FGA30N120FTD	Fairchild Semiconductor	Trench IGBT • Field Stop Trench Technology • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 30 A • High Input Impedance Applications • Solar Inverter, UPS, Welder, PFC General Description Using advanced field stop trench technology, Fair
20	BGA3012	NXP Semiconductors	1GHz 12dB gain wideband amplifier MMIC and benefits  Internally biased  Flat gain  High linearity with an IP3O of 40 dBm and an IP2O of 60 dBm  Noise figure of 3.1 dB  75  input and output impedance  Operating from 5 V to 8 V supply 1.3 Applications  General wideband amplifiers.