| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
250V N-Channel MOSFET )*63 2.0++63 7 )*+ &' '& )8 9 ±;+ , ( ( ( , = ( = ,$ @ @ @$6 6 6 : , 7 (! < |
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Fairchild Semiconductor |
150V N-Channel MOSFET 6 6 + < 6 < !$ : + 1-2)74 1-&**74 : &)* && ' 8 9) 98 2 ±2) |
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Fairchild Semiconductor |
400V N-Channel MOSFET • • • • • • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK FQD Series I-PAK G D S FQU Series G! ! S |
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Fairchild Semiconductor |
60V P-Channel MOSFET • -9.4 A, -60 V, RDS(on) = 185 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 45 pF) • 100% Avalanche Tested G S D D-PAK GDS S G I-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDS |
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Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET • • • • • • • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drive |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D G S D-PAK FQD Series I-PAK G D S FQU Series G S Absolute Max |
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Fairchild Semiconductor |
60V P-Channel MOSFET • • • • • • -12A, -60V, RDS(on) = 0.135Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! ! ● ● ▶ ▲ ● G S D-PAK FQD Series I-PAK G D S FQU Series ! D |
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Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET • • • • • • • • 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirem |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 8.5 nC) Low Crss ( typical 4.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK FQD Series I-PAK G D S FQU Series G! ! |
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Fairchild Semiconductor |
200V N-Channel MOSFET + < 6 < !$ : + 2-)374 2-0**74 : )** '( 89 .* 8 ±.* + % % % + |
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Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET • • • • • • • 7.6A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 13 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic driv |
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Fairchild Semiconductor |
200V N-Channel MOSFET < 4 < !$ 8 * 1,)562 1,/((62 8 )(( '( 57 9: ±9( * % % % * = % |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • 10A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Ab |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D-PAK FQD Series I-PAK G D S FQU Series G! ! " " " ! S |
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Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET • • • • • • • • 24A, 60V, RDS(on) = 0.039Ω @ VGS = 10V Low gate charge ( typical 15 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requiremen |
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Fairchild Semiconductor |
250V N-Channel MOSFET • • • • • • 2.4A, 250V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S |
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Fairchild Semiconductor |
300V N-Channel MOSFET -&273 1-/**73 8 )** &' / 2& 94 ±)* + ( ( ( + < ( < +$ ? ? ?$7 7 7 : + 8 (! ; |
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Fairchild Semiconductor |
400V N-Channel MOSFET 0+%672 0+.&&72 8 (&& %& . %6 9& ±,& ) ' ' ' ) < ' < )5 ? ? ?57 7 7 : ) |
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Fairchild Semiconductor |
400V P-Channel MOSFET • • • • • • -2.7A, -400V, RDS(on) = 3.1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! ! ● ● ▶ ▲ ● G S D-PAK FQD Series I-PAK G D S FQU Series ! D |
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Fairchild Semiconductor |
200V N-Channel MOSFET < 7 < !$ : + 3-)'85 3-1**85 : )** '( (9 )1 ±(* + % % % + > % > + |
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Desde 2024. D4U Semiconductor.
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