| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
4-Pin DIP Phototransistor Optocouplers • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups ♦ FOD814: 20 –300% ♦ FOD814A: 50 –150% ♦ FOD817: 50 –600% ♦ FOD817A: 80 –160% ♦ FOD817B: 130 –260% ♦ FOD817C: 200 –400% ♦ FOD817D: 300 –600% • Minimum BVCEO of 70 V Guaranteed • Safety |
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Fairchild Semiconductor |
Gate Drive Optocoupler • High Noise Immunity Characterized by 35 kV/μs Minimum Common Mode Rejection • 2.5 A Peak Output Current Driving Capability for Most 1200 V/20 A IGBT • Use of P-channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail • |
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ON Semiconductor |
IGBT Drive Optocoupler necessary for preventing fault conditions that lead to destructive thermal runaway of IGBTs. The device utilizes onsemi’s proprietary OPTOPLANAR® coplanar packaging technology and optimized IC design to achieve reliable high isolation and high noise |
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Fairchild Semiconductor |
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20 –300% FOD817: 50 –600% FOD814A: 50 –150% FOD817A: 80 –160% FOD817B: 130 –260% FOD817C: 200 –400% FOD817D: 300 –600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulato |
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Fairchild Semiconductor |
High Speed MOSFET Gate Driver Optocoupler ■ Guaranteed operating temperature range of -20°C to ■ ■ ■ ■ ■ ■ ■ ■ ■ tm Description The FOD3181 is a 0.5A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode optically |
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Fairchild Semiconductor |
IGBT Drive Optocoupler ■ Input LED Drive Facilitates Receiving Digitally Encoded Signals from PWM Output ■ Optically Isolated Fault-Sensing Feedback ■ Active Miller Clamp to Shut Off IGBT During High dv/dt without Negative Supply Voltage ■ High Noise Immunity Characterized |
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Fairchild Semiconductor |
High Speed Gate Drive Optocoupler • FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation • 3.0 A Peak Output Current Driving Capability for Medium- Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage |
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Fairchild Semiconductor |
High Speed Gate Drive Optocoupler • FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation • 3.0 A Peak Output Current Driving Capability for Medium- Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage |
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Fairchild Semiconductor |
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20 –300% FOD817: 50 –600% FOD814A: 50 –150% FOD817A: 80 –160% FOD817B: 130 –260% FOD817C: 200 –400% FOD817D: 300 –600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulato |
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Fairchild Semiconductor |
LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers ■ Low power consumption ■ High speed ■ Available in single channel 8-pin DIP (FOD250L), Description The FOD250L, FOD050L and FOD053L optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor. These devices are |
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Fairchild Semiconductor |
LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers ■ Low power consumption ■ High speed ■ Available in single channel 8-pin DIP (FOD250L), Description The FOD250L, FOD050L and FOD053L optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor. These devices are |
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Fairchild Semiconductor |
Dual Channel CMOS Optocoupler ■ ■ ■ ■ ■ ■ ■ ■ ■ General Description The FOD0708 and FOD0738 optocouplers consist of an AlGaAs LED optically coupled to a high speed transimpedance amplifier and voltage comparator. These optocouplers utilize the latest CMOS IC technology to achieve |
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Fairchild Semiconductor |
Gate Drive Optocoupler ■ High noise immunity characterized by 20kV/µs minimum common mode rejection ■ Use of P-channel MOSFETs at output stage enables output voltage swing close to the supply rail ■ Wide supply voltage range from 15V to 30V ■ Fast switching speed – 500ns m |
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ON Semiconductor |
4-Pin DIP Phototransistor Optocouplers • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups ♦ FOD814: 20 –300% ♦ FOD814A: 50 –150% ♦ FOD817: 50 –600% ♦ FOD817A: 80 –160% ♦ FOD817B: 130 –260% ♦ FOD817C: 200 –400% ♦ FOD817D: 300 –600% • Minimum BVCEO of 70 V Guaranteed • Safety |
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ON Semiconductor |
4-Pin DIP Phototransistor Optocouplers • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups ♦ FOD814: 20 –300% ♦ FOD814A: 50 –150% ♦ FOD817: 50 –600% ♦ FOD817A: 80 –160% ♦ FOD817B: 130 –260% ♦ FOD817C: 200 –400% ♦ FOD817D: 300 –600% • Minimum BVCEO of 70 V Guaranteed • Safety |
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Fairchild Semiconductor |
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20 –300% FOD817: 50 –600% FOD814A: 50 –150% FOD817A: 80 –160% FOD817B: 130 –260% FOD817C: 200 –400% FOD817D: 300 –600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulato |
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Fairchild Semiconductor |
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20 –300% FOD817: 50 –600% FOD814A: 50 –150% FOD817A: 80 –160% FOD817B: 130 –260% FOD817C: 200 –400% FOD817D: 300 –600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulato |
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Fairchild Semiconductor |
High Speed MOSFET Gate Driver Optocoupler ■ Guaranteed operating temperature range of -40°C to ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ tm Description The FOD3180 is a 2A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode opti |
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Fairchild Semiconductor |
4-Pin Phototransistor Optocouplers ■ ■ ■ ■ ■ ■ AC input response Applicable to Pb-free IR reflow soldering Compact 4-pin package High current transfer ratio: 600% minimum Safety agency approvals pending High input-output isolation voltage of 5000Vrms Applications ■ Power supply regula |
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ON Semiconductor |
4-Pin DIP Phototransistor Optocouplers • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups ♦ FOD814: 20 –300% ♦ FOD814A: 50 –150% ♦ FOD817: 50 –600% ♦ FOD817A: 80 –160% ♦ FOD817B: 130 –260% ♦ FOD817C: 200 –400% ♦ FOD817D: 300 –600% • Minimum BVCEO of 70 V Guaranteed • Safety |
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Desde 2024. D4U Semiconductor.
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