| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
PDP Trench IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.55 V @ IC = 70 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • PDP TV, Consumer Appliances, Lighting November 2013 General Description Using novel trench IGBT |
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Fairchild Semiconductor |
360V PDP Trench IGBT • High Current Capability • Low Saturation Voltage: VCE (sat) =1.59 V @ IC = 50 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • PDP TV, Consumer appliances, Lighting November 2013 General Description Using novel trench IGBT |
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Fairchild Semiconductor |
Short Circuit Rated IGBT • Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant September 2013 General Description Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-powe |
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Fairchild Semiconductor |
70A PDP IGBT • High current capability • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A • High input impedance • Fast switching • RoHS complaint Application . PDP System June 2007 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesr |
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Fairchild Semiconductor |
IGBT • Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant Applications • Sewing Machine, CNC, Home Appliances, Motor Control Stptember 2013 General Description Using advanced NPT IGBT technology, F |
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Fairchild Semiconductor |
IGBT • Short Circuit Rated 10 us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant September 2013 General Description Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-pow |
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Fairchild Semiconductor |
IGBT • High current capability • Low saturation voltage: VCE(sat) =1.9V @ IC = 5A • High input impedance • Fast switching • RoHS compliant Applications • Induction Heating, UPS, SMPS, PFS October 2008 tm General Description Using Novel Field Stop IGBT Te |
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Fairchild Semiconductor |
RUF IGBT CO-PAK • High speed switching • Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A • High input impedance • CO-PAK, IGBT with FRD : trr = 50 ns (typ.) • Short Circuit rated tm Applications Motor controls and general purpose inverters. Description Fairc |
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Fairchild Semiconductor |
PDP IGBT • High Current Capability • Low saturation voltage: VCE(sat) =1.4V @ IC = 40A • High Input Impedance • Fast switching • RoHS Complaint General Description Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching |
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Fairchild Semiconductor |
RUF IGBT CO-PAK • High speed switching • Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A • High input impedance • CO-PAK, IGBT with FRD : trr = 50 ns (typ.) • Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V Applications Motor controls and general purpo |
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Fairchild Semiconductor |
50A PDP IGBT • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC = 30A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the opti |
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Fairchild Semiconductor |
330V PDP Trench IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V @ IC = 50 A • High Input Impedance • RoHS Compliant Applications • PDP TV November 2013 General Description Using novel trench IGBT technology, Fairchild's new series of trench IGBT |
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Fairchild Semiconductor |
PDP IGBT • High current capability • Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A • High input impedance • Fast switching • RoHS compliant General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optim |
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Fairchild Semiconductor |
PDP Trench IGBT • High Current Capability • Low saturation voltage: VCE(sat) =1.6V @ IC = 45A • High input impedance • Fast switching • RoHS complaint tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the opti |
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Fairchild Semiconductor |
30A PDP Trench IGBT • High Current Capability • Low saturation voltage: VCE(sat) =1.55V @ IC = 30A • High input impedance • Fast switching Applications • PDP System April 2009 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench |
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Fairchild Semiconductor |
70A PDP IGBT • High current capability • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A • High input impedance • Fast switching • RoHS complaint Application . PDP System June 2007 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesr |
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Fairchild Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) =1.5 V(Typ.) @ IC = 30 A • High Input Impedance • RoHS Compliant Applications • IPL (Intense Pulsed Light) November 2014 General Description Using innovative field stop IGBT technology, Fa |
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Fairchild Semiconductor |
IGBT • Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant September 2013 General Description Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-powe |
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Fairchild Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) =1.7 V @ IC = 5 A • High Input Impedance • RoHS Compliant Applications • HID Ballast November 2013 General Description Using novel field stop IGBT technology, Fairchild’s new series of fie |
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Fairchild Semiconductor |
N-Channel Ignition IGBT SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package JEDEC TO-263AB D²-Pak JEDEC TO-220AB E CG Symbol G |
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Desde 2024. D4U Semiconductor.
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