| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
40A Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS General Description Using novel f |
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ON Semiconductor |
IGBT • Maximum Junction Temperature : TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A • High Input Impedance • Fast Switching: EOFF = 6.5 mJ/ |
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Fairchild Semiconductor |
Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) =2.3V @ IC = 60A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer t |
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Fairchild Semiconductor |
IGBT • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology |
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ON Semiconductor |
IGBT • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A • High Input Impedance • Fast Switching: EOFF = 7.5 uJ/ |
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Fairchild Semiconductor |
IGBT • Maximum Junction Temperature : TJ = 175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.85 V ( Typ.) @ IC = 40 A • High Input Impedance • Fast Switching • Tighten Par |
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Fairchild Semiconductor |
Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) =2.3V @ IC = 60A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer t |
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ON Semiconductor |
IGBT • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • These Devices are Pb−Free and are RoHS Compliant App |
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ON Semiconductor |
IGBT • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A • High Input Impedance • Fast Switching: EOFF = 7.5 uJ/ |
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ON Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • Qualified to Automotive Requirements of AEC−Q101 (FGH40N60SFDTU−F085) • These Devices are Pb−Free and are RoHS Compliant Applic |
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ON Semiconductor |
IGBT • FS Trench Technology, Positive Temperature Coefficient • Excellent Switching Performance due to Kelvin Emitter Pin • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • 100% of the Parts Tested for ILM • High Input Impedance • This Device is Pb− |
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ON Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A • High Input Impedance • Fast Switching • These Devices are Pb−Free and are RoHS Compliant Applications • UPS, Welder, PFC www.onsemi.com C G E E C G TO−247−3L |
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Fairchild Semiconductor |
IGBT • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A • 100% of the Parts tested for ILM(1) • High Input Impedance • RoHS Compliant Applications • Solar Inverter, Welder, |
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Fairchild Semiconductor |
80A Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A • High input impedance • Fast switching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer |
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Fairchild Semiconductor |
Field Stop IGBT • Maximum Junction Temperature: TJ = 175oC • Positive Temperaure Co-efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A • High Input Impedance • Fast Switching: EOFF = 7.5 uJ/A |
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ON Semiconductor |
IGBT a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applicat |
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ON Semiconductor |
IGBT • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • These Devices are Pb−Free and are RoHS Compliant App |
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ON Semiconductor |
IGBT • Maximum Junction Temperature : TJ =175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A • 100% of the Parts Tested for ILM(1) • High Input Impeda |
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ON Semiconductor |
IGBT • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A • High Input Impedance • Tightened Parameter Distributi |
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ON Semiconductor |
IGBT • Max Junction Temperature 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.33 V (Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM • High Input Impedance • Fast |
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Desde 2024. D4U Semiconductor.
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