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Fairchild Semiconductor |
ULTRA FAST RECOVERY POWER RECTIFIER ! -. ** -. ** 5 * -. ** 5 -. ** 5/ 6 !0 2 !2µ 7 /; 5 1 |
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Fairchild Semiconductor |
NPN Amplifier 2222A — NPN Multi-Chip General-Purpose Amplifier Ordering Information Part Number FFB2222A FMB2222A MMPQ2222A Top Mark .1P .1P MMPQ2222A Package SC70 6L SSOT 6L SOIC 16L Packing Method Tape and Reel Tape and Reel Tape and Reel Absolute Maximum R |
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Fairchild Semiconductor |
ULTRA FAST RECOVERY POWER RECTIFIER ! ./ , , ./ , , 7 , ./ , , 7 ./ , , 70 8 !1 4 4µ 9 0< 7 !° |
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Fairchild Semiconductor |
ULTRA FAST RECOVERY RECTIFIER -. ** 8 * -. ** 8 -. ** 8/ 9 !0 3 53µ : /; 8 5+° ° 5+ ° ° # # # # # # # 2 # # # |
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Fairchild Semiconductor |
ULTRA FAST RECOVERY POWER RECTIFIER -. ** 5 * -. ** 5 -. ** 5/ 6 0 2 2µ 7 /: 5 +° ° + ° ° " " " " " " " 1+ |
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Fairchild Semiconductor |
ULTRA FAST RECOVERY POWER RECTIFIER -. ** 5 * -. ** 5 -. ** 5/ 6 0 2 2µ 7 /: 5 +° ° + ° ° " " " " " " " 1 |
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Fairchild Semiconductor |
NPN & PNP General Purpose Amplifier its. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise no |
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Fairchild Semiconductor |
PNP Multi-Chip General Purpose Amplifier e consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Ef |
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Fairchild Semiconductor |
NPN General Purpose Amplifier . The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, |
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Fairchild Semiconductor |
PNP Multi-Chip General Purpose Amplifier evice may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Cha |
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Fairchild Semiconductor |
NPN & PNP General Purpose Amplifier of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristic |
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ON Semiconductor |
NPN General-Purpose Amplifier |
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Fairchild Semiconductor |
Ultrafast Recovery Power Rectifier • Ultrafast with Soft Recovery : < 45ns(@IF=10A) • High Reverse Voltage : VRRM = 300V • Avalanche Energy Rated • Planar Construction Applications • General purpose • Switching Mode Power Supply • Free-wheeling diode for motor application • Power swi |
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Fairchild Semiconductor |
Ultrafast Recovery Power Rectifier • Ultrafast with Soft Recovery : < 45ns (@IF = 20A) • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply • Free-wheeling diode for motor application • Powe |
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Fairchild Semiconductor |
Ultrafast Dual Rectifiers High Reverse Voltage : VRRM = 200V Avalanche Energy Rated Planar Construction tm Description The FFB20UP20DN is an ultrafast rectifier. It has a low forward voltage drop and is a silicon nitride passivated ionimplanted epitaxial planar constr |
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Fairchild Semiconductor |
FFB10UP20S • Ultrafast with Soft Recovery : < 45ns • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction • RoHS Compliant Applications • Output Rectifiers • Switching Mode Power Supply • Free-wheeling diode for motor application • |
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Fairchild Semiconductor |
Ultrafast Recovery Power Rectifier • Ultrafast with Soft Recovery : < 45ns • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction • RoHS Compliant Applications • Output Rectifiers • Switching Mode Power Supply • Free-wheeling diode for motor application • |
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ON Semiconductor |
Ultrafast Diode • Ultrafast Recovery, trr = 45 ns (@ IF = 20 A) • Max Forward Voltage, VF = 1.15 V (@ TC = 25°C) • Reverse Voltage, VRRM = 200 V • Avalanche Energy Rated • RoHS Compliant Applications • Output Rectifiers • SMPS, Welder, UPS • Free−Wheeling Diode for |
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Fairchild Semiconductor |
ULTRA FAST RECOVERY POWER RECTIFIER -. * * -. * * 7 * -. * * 7 -. * * 7/ 8 0 2 2µ 9 /: 7 +° |
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Desde 2024. D4U Semiconductor.
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