| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A • RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 A • Fast Switching Speed • Low Gate Charge, QG = 17.6 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Curre |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • rDS(ON) = 92mΩ (Typ.), VGS = 5V, ID = 10A • Qg(tot) = 4.2nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83524 Applications • Mot |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A • Qg(tot) = 25nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant December 2010 Applications • Motor |
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Fairchild Semiconductor |
60V P-Channel PowerTrench MOSFET • –15 A, –60 V. RDS(ON) = 100 mΩ @ VGS = –10 V RDS(ON) = 130 mΩ @ VGS = –4.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter • Power |
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Fairchild Semiconductor |
30V P-Channel PowerTrench MOSFET • –40 A, –30 V. RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 30 mΩ @ VGS = –4.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Qualified to AEC Q101 D G S G S TO-25 |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A • Low Gate Charge (Typ. 8.3 nC) • Low Crss (Typ. 3.7 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Unint |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • rDS(ON) = 101mΩ (Typ.), VGS = 10V, ID = 4A • Qg(tot) = 11.2nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82845 Applications • |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A • RDS(on) = 64 mΩ (Typ.) @ VGS = 5 V, ID = 12 A • Low Gate Charge (Typ. 22.2 nC) • Low Crss (Typ. 42 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Descripti |
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Fairchild Semiconductor |
100V N-Channel PowerTrench MOSFET • 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V • Low gate charge (28nC typical) • Fast Switching • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D G S G D-PAK |
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Fairchild Semiconductor |
N-Channel MOSFET • 12 A, 30 V RDS(ON) = 14.5 mΩ @ VGS = 10 V RDS(ON) = 21 mΩ @ VGS = 4.5 V • Low gate charge • Fast Switching Speed • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25o |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 3.4 Ω (Typ.) @ VGS = 10 V, ID = 1 A • Low Gate Charge (Typ. 4.5 nC) • Low Crss (Typ. 3.7 pF) • 100% Avalanche Tested Applications • LED TV • Consumer Appliances • Lighting • Uninterruptible Power Supply November 2013 Description UniFETTM |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A • RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 A • Low Gate Charge (Typ.2.78 nC) • Low Crss (Typ. 2.04 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Desc |
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Fairchild Semiconductor |
30V N-Channel MOSFET • 64 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (17nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capabili |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • r DS(ON) = 9m Ω , V GS = 10V, ID = 35A • r DS(ON) = 12m Ω , V GS = 4.5V, I D = 35A • High performance trench technology for extremely low r DS(ON) • Low gate charge Applications • DC/DC converters • High power and current handling capability D |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-2 |
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Fairchild Semiconductor |
N-Channel MOSFET General Description Shielded Gate MOSFET Technology Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Po |
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ON Semiconductor |
N-Channel MOSFET • 25 A, 100 V. RDS(ON) = 46 mW @ VGS = 10 V RDS(ON) = 51 mW @ VGS = 6 V • Low Gate Charge (38 nC Typical) • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON) • High Power and Current Handling Capability ABSOLUTE MAX |
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Fairchild Semiconductor |
N-Channel MOSFET • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Applications • DC/DC converters |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET 21 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.050 Ω @ VGS = 4.5 V. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). Applications DC/DC converter Motor drives D D G G S TO-25 |
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Desde 2024. D4U Semiconductor.
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