| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 168 mΩ • Ultra Low Gate Charge (Typ. Qg = 60 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Solar Inverter • AC - DC |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 220 mΩ • Ultra Low Gate Charge (Typ. Qg = 48 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 129 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • BVDSS > 650 V @ TJ = 150oC • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A • Ultra Low Gate Charge (Typ. Qg = 45 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PD |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 170 mΩ • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter |
|
|
|
|
ON Semiconductor |
N-Channel MOSFET • 650 V @TJ = 150°C • Max. RDS(on) = 199 mΩ • Ultra low gate charge (typ. Qg = 57 nC) • Low effective output capacitance (typ. Coss.eff = 160 pF) • 100% avalanche tested SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super |
|
|
|
|
ON Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 170 mW • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 160 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Computing / D |
|
|
|
|
ON Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 140 mW • Ultra Low Gate Charge (Typ. Qg = 35 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 345 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Computing / |
|
|
|
|
ON Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 140 mW • Ultra Low Gate Charge (Typ. Qg = 39 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF) • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant App |
|
|
|
|
ON Semiconductor |
N-Channel MOSFET 650 V @ TJ = 150C Typ. RDS(on) = 510 mW Ultra Low Gate Charge (Typ. Qg = 20 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF) 100% Avalanche Tested ESD Improved Capacity RoHS Compliant Applications LCD/LED/PDP TV and Mon |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 160 mΩ • Ultra Low Gate Charge (Typ. Qg = 63 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 178 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 96 mΩ • Ultra Low Gate Charge (Typ. Qg = 63 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Po |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 112 mΩ • Ultra Low Gate Charge (Typ. Qg = 54 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial P |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 650V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MO |
|
|
|
|
Fairchild Semiconductor |
MOSFET • RDS(on) = 1.8 Ω (Typ.) • Ultra Low Gate Charge (Typ. Qg = 11 nC) • Low Eoss (Typ. 1.1 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications Descripti |
|
|
|
|
Fairchild Semiconductor |
MOSFET • Typ. RDS(on) = 710 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 22 nC) • Low Eoss (Typ. 2.3 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications De |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 350 mΩ • Ultra Low Gate Charge (Typ. Qg = 28 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 90 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter • |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A • Ultra Low Gate Charge ( Typ.Qg = 30.4nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant TM SupreMOS August 2009 Description The SupreMOS MOSFET, Fairchild’s next gene |
|
|
|
|
Fairchild Semiconductor |
SuperFET • • • • • • 650V @ Tj = 150°C Typ. Rds(on) = 0.32Ω Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff = 95pF) 100% avalanche tested RoHS Compliant D { ● ◀ G D S TO-220AB FCP Series G{ GD S ▲ ● ● TO-220F FCPF |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 650 V @TJ = 150°C • Typ. RDS(on) = 102 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Pow |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 170 mΩ • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter |
|
Desde 2024. D4U Semiconductor.
|