ON Semiconductor EMD Hoja de datos

No.	parte #	Fabricante	Descripción
1	EMD12	Jin Yu Semiconductor	General purpose transistors z Both the DTC144E chip and DTA144E chip in a package z Mounting possible with SOT-563 automatic mounting machines. z Transistor elements are independent, eliminating interference. z Mounting cost and area be cut in half. Marking: D12 Equivalent circ
2	PEMD13	NXP Semiconductors	NPN/PNP Transistor • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement of general purpose transistors in digital applications • Control of IC inp
3	PEMD3	NXP Semiconductors	NPN/PNP resistor-equipped transistors Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs 1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications 1.
4	EMD2095	Elite Semiconductor	PWM Step-Up DC/DC Converter           Up to 9 WLEDs supports Low Quiescent Current: 120 μA Over Voltage Protection: 31V Inherently Matched LED Current Shutdown Current < 1μA Reference Voltage 0.245V PWM Dimming Control (2KHz~200kHz) Internal Soft Start and Compensatio
5	EMD2080	Elite Semiconductor	Constant Current LED Lighting Driver g g Supply Voltage: 6V ~ 30V Driving Current: n Up to 500mA @VIN=12V, VOUT=22.4V Over Voltage Protection: 36V Shutdown Current < 1μA Reference Voltage 0.245V Internal Soft Start and Compensation 1.4A Internal power MOSFET Switch Thermal Shutdown Pro
6	EMD2055	Elite Semiconductor	PWM Step-Up DC/DC Converter Up to 11 WLEDs supports Low Quiescent Current: 120 µA Over Voltage Protection: 36.5V Inherently Matched LED Current Shutdown Current < 1µA To safeguard the system, the EMD2055 includes various protection circuits such as under-voltage lockout, curre
7	PEMD15	NXP Semiconductors	NPN/PNP Transistor s s s s Built-in bias resistors Simpliﬁes circuit design Reduces component count Reduces pick and place costs 1.3 Applications s Low current peripheral driver s Control of IC inputs s Replaces general-purpose transistors in digital applications 1.4
8	EMD4DXV6T1	ON Semiconductor	Dual Bias Resistor Transistors 6 1 • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb−Free Devices SOT−563 CASE 463A STYLE 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rat
9	EMD4DXV6T5	ON Semiconductor	Dual Bias Resistor Transistors 6 1 • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb−Free Devices SOT−563 CASE 463A STYLE 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rat
10	EMD5DXV6T1	ON Semiconductor	Dual Bias Resistor Transistors G DIAGRAM U5 D U5 = Specific Device Code D = Date Code ORDERING INFORMATION Device EMD5DXV6T1 EMD5DXV6T5 Package SOT−563 SOT−563 Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel This document contains information on a product unde
11	PEMD17	NXP Semiconductors	NPN/PNP Transistor s s s s Built-in bias resistors Simpliﬁes circuit design Reduces component count Reduces pick and place cost 1.3 Applications s Low current peripheral driver s Control of IC inputs s Replacement of general-purpose transistors in digital applications
12	PEMD19	NXP Semiconductors	NPN/PNP Transistor
13	TEMD5120	Vishay Semiconductors	Silicon PIN Photodiode • Package type: surface mount • Package form: top view • Dimensions (L x W x H in mm): 5 x 4.24 x 1.12 • Radiant sensitive area (in mm2): 4.4 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm emi
14	TEMD5110	Vishay Semiconductors	Silicon PIN Photodiode • Large radiant sensitive area (A = 7.5 mm2) • Wide angle of half sensitivity ϕ = ± 65 ° e4 • High photo sensitivity • Fast response times • Small junction capacitance • Plastic package with IR filter (λ = 870...950 nm) • Lead-free component • Compon
15	PEMD2	NXP Semiconductors	NPN/PNP resistor-equipped transistors I I I I Built-in bias resistors Simpliﬁes circuit design Reduces component count Reduces pick and place costs 1.3 Applications I Low current peripheral driver I Control of IC inputs I Replaces general-purpose transistors in digital applications 1.4
16	EMD4DXV6	ON Semiconductor	Dual Bias Resistor Transistors • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices MAX