| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Potens semiconductor |
N-Channel MOSFETs 100V,2A, RDS(ON) =200mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed App licGaretieonnDsevice Available Networking Load Switch LED applications S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol |
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Potens semiconductor |
N-Channel MOSFETs Improved dv/dt capability Fast switching Green Device Available ID 0.1A SOT23-3S Pin Configuration D S G G D S Applications High efficient switched mode power supplies TV Power Adapter/charger LED Lighting Absolute Maximum Rating |
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ON Semiconductor |
Low-Cost LED Dimming • PF = 0.8 • THD = 53.8% • High Light Output Table 2. CIRCUIT DATA • Dimming a Function of the Dimmer’s Range • Low BOM Cost • Dimmable Circuit Data VRMS(IN) IRMS(IN) PF THD P(in) 100 VRMS 112 mA 0.847 44.2% 9.53 W 127 VRMS 118 mA 0.800 53.8% 12 |
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ON Semiconductor |
N-Channel MOSFET • Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A • Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • Fas |
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Potens semiconductor |
P-Channel MOSFETs -150V,-1A, RDS(ON) =750mΩ@VGS = -10V Improved dv/dt capability Fast switching Green Device Available Applications Networking Load Switch LED applications S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM P |
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Potens semiconductor |
N-Channel MOSFETs 100V,1.4A , RDS(ON)=350mΩ@VGS=10V Improved dv/dt capability Fast switching Green Device Available Applications Networking Load Switch LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TS |
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ON Semiconductor |
Low-Cost LED Dimming • PF = 0.8 • THD = 53.8% • High Light Output Table 2. CIRCUIT DATA • Dimming a Function of the Dimmer’s Range • Low BOM Cost • Dimmable Circuit Data VRMS(IN) IRMS(IN) PF THD P(in) 100 VRMS 112 mA 0.847 44.2% 9.53 W 127 VRMS 118 mA 0.800 53.8% 12 |
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ON Semiconductor |
2-Channel ESD Protection Array • Two Channels of ESD Protection • ±8 kV Contact, ±15 kV Air ESD Protection per Channel (IEC 61000−4−2 Standard) • ±15 kV of ESD Protection per Channel (HBM) • Low Loading Capacitance of 3 pF Typical • Low Leakage Current is Ideal for Battery−Powered |
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ON Semiconductor |
2-Channel ESD Protection Array • Two Channels of ESD Protection • ±8 kV Contact, ±15 kV Air ESD Protection per Channel (IEC 61000−4−2 Standard) • ±15 kV of ESD Protection per Channel (HBM) • Low Loading Capacitance of 3 pF Typical • Low Leakage Current is Ideal for Battery−Powered |
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ON Semiconductor |
5-Channel ESD Protection Array Five Channels of ESD Protection 8 kV Contact, 15 kV Air ESD Protection per Channel (IEC 61000−4−2 Standard) 15 kV of ESD Protection per Channel (HBM) Low Loading Capacitance (3 pF Typical) Low Leakage Current is Ideal for Battery−Powered |
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ON Semiconductor |
6-Channel ESD Protection Array Six Channels of ESD Protection 8 kV Contact, 15 kV Air ESD Protection per Channel (IEC 61000−4−2 Standard) 15 kV of ESD Protection per Channel (HBM) Low Loading Capacitance (3 pF Typical) Low Leakage Current is Ideal for Battery−Powered |
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Desde 2024. D4U Semiconductor.
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