| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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EIC discrete Semiconductors |
SILICON RECTIFIERS : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. DO - 41 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plasti |
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General Semiconductor |
FAST EFFICIENT PLASTIC RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated chip junction ♦ Low power loss ♦ Low leakage current ♦ High surge current capability ♦ Superfast recovery time for high efficiency ♦ High temperature s |
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General Semiconductor |
MINIATURE GLASS PASSIVATED FAST SWITCHING RECTIFIER DO-204AP 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed case ♦ Glass passivated cavity-free junction ♦ 2.0 Ampere operation |
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General Semiconductor |
MINIATURE GLASS PASSIVATED FAST SWITCHING RECTIFIER DO-204AP 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed case ♦ Glass passivated cavity-free junction ♦ 2.0 Ampere operation |
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General Semiconductor |
MINIATURE GLASS PASSIVATED FAST SWITCHING RECTIFIER DO-204AP 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed case ♦ Glass passivated cavity-free junction ♦ 2.0 Ampere operation |
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General Semiconductor |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER P A T E N T E Case Style G3 1.0 (25.4) MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package ♦ 3.0 ampere operation at T |
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General Semiconductor |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER P A T E N T E Case Style G3 1.0 (25.4) MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package ♦ 3.0 ampere operation at T |
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General Semiconductor |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER P A T E N T E Case Style G3 1.0 (25.4) MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package ♦ 3.0 ampere operation at T |
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General Semiconductor |
FAST EFFICIENT PLASTIC RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated chip junction ♦ Low power loss ♦ Low leakage current ♦ High surge current capability ♦ Superfast recovery time for high efficiency ♦ High temperature s |
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Gulf Semiconductor |
SINTERED GLASS JUNCTION GENERAL AVALANCHE RECTIFIER Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability SOD-57 MECHANICAL DATA Case: SOD-57 sintered glass case Terminal: Plated axial leads solderable per MIL-ST |
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Gulf Semiconductor |
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed 350°C /10sec/0.375”lead length at 5 lbs tension Operate at Ta = |
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Gulf Semiconductor |
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed 350°C /10sec/0.375”lead length at 5 lbs tension Operate at Ta = |
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Diotec Semiconductor |
Silicon Rectifiers grenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating ju |
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Diotec Semiconductor |
Silicon Rectifiers grenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating ju |
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Diotec Semiconductor |
Silicon Rectifiers grenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating ju |
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EIC discrete Semiconductors |
SILICON RECTIFIERS : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. DO - 41 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plasti |
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General Semiconductor |
FAST EFFICIENT PLASTIC RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated chip junction ♦ Low power loss ♦ Low leakage current ♦ High surge current capability ♦ Superfast recovery time for high efficiency ♦ High temperature s |
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General Semiconductor |
MINIATURE GLASS PASSIVATED FAST SWITCHING RECTIFIER |
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EIC discrete Semiconductors |
AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O |
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General Semiconductor |
FAST EFFICIENT PLASTIC RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated chip junction ♦ Low power loss ♦ Low leakage current ♦ High surge current capability ♦ Superfast recovery time for high efficiency ♦ High temperature s |
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Desde 2024. D4U Semiconductor.
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