| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
POWER TRANSISTOR • Improved Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain hFE — Fast Switching • Motorola “6SIGMA” Philosophy Provides Tight and Reproductible Parametric Distributions • Specified Dynamic Saturation Data • Full Charac |
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ON Semiconductor |
Power Transistor • Improved Efficiency Due to the Low Base Drive Requirements: — High and Flat DC Current Gain hFE — Fast Switching • Robustness Thanks to the Technology Developed to Manufacture this Device • Motorola “6 SIGMA” Philosophy Provides Tight and Reproduc |
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ON Semiconductor |
POWER TRANSISTOR |
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Inchange Semiconductor |
Silicon NPN Power Transistor IN BUH315D TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 |
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Desde 2024. D4U Semiconductor.
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