No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
NPN Silicon Power Darlington • Integrated High−Voltage Active Clamp • Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the −40°C to +125°C Temperature Range • Clamping Energy Capability 100% Tested in a Live Ignition Circuit • High DC Current Gain/Low Saturation Vo |
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ON Semiconductor |
Low-Voltage SPDT Analog Switch or 2:1 Multiplexer/De-multiplexer Bus Switch • Analog and Digital Applications • Space−saving, SC70 6−lead, Surface−mount Package • Low On Resistance: <10 W on typical at 3.3 V VCC • Broad VCC Operating Range: 1.65 V to 5.5 V • Rail−to−rail Signal Handling • Power−down, High−impedance Control I |
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Inchange Semiconductor |
Silicon Darlington NPN Power Transistor pecified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage |
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Mospec Semiconductor |
POWER TRANSISTORS(6A/375-400V/75W) |
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