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H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET ● RDS(ON)= 270 mΩ @VGS=4.5V ● RDS(ON)= 330 mΩ @VGS=2.5V ● RDS(ON)= 450 mΩ @VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding DSC 1&KDQQH |
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Fairchild Semiconductor |
N-Channel Low-Frequency Low-Noise Amplifier = 0V, ID = 0 VDS = 0V, VGS = 10V VDD = 10V, VGS(on) = 0V ID = 10mA, VGS(off) = 6.0V 20 2.0 Min. 40 Max. 1.0 100 6.0 0.5 40 5.0 6.0 4.0 50 Units V nA mA V V Ω pF ns ns ns ©2003 Fairchild Semiconductor Corporation Rev. A, February 2003 BSR57 Packag |
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Fairchild Semiconductor |
PNP General Purpose Amplifier herwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max *BSR18A 350 2.8 357 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corpora |
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Fairchild Semiconductor |
PNP Amplifier - Continuous Junction and Storage Temperature Range -40 -40 -5 -200 -55 to +150 V V V mA °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted |
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Fairchild Semiconductor |
NPN Darlington Transistor 10V, IC = 0.5A IC = 500mA, IB = 500µA IC = 1.0A, IB = 4.0mA IC = 500mA, IB = 500µA IC = 1.0mA, IB = 4.0mA 1,000 2,000 1.3 1.6 0.9 2.2 V V Min. 45 60 5 50 50 Typ. Max. Units V V V nA nA Thermal Characteristics TA=25°C unless otherwise noted Symbol PD |
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Fairchild Semiconductor |
N-Channel Low-Frequency Low Noise Amplifier VDD = 10V, VGS(on) = 0V ID = 20mA, VGS(off) = 10V 50 4 10 750 25 5 6 3 25 Min. 40 Typ. Max. 1 Units V nA mA V mV Ω pF nS nS nS ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 BSR56 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 |
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Fairchild Semiconductor |
N-Channel Low-Frequency Low Noise Amplifier DD = 10V, VGS(on) = 0V ID = 10mA, VGS(off) = 10V 8 0.8 Min. 40 Typ. Max. 1 80 4 0.4 60 5 10 10 100 Units V nA mA V V Ω pF nS nS nS ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 BSR58 Package Dimensions SOT-23 0.20 MIN 2.40 ±0. |
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H&M Semiconductor |
P-Channel 20V (D-S) MOSFET ● RDS(ON)= 0.48Ω @VGS=-4.5V ● RDS(ON)= 0.67Ω @VGS=-2.5V ● RDS(ON)= 0.95Ω @VGS=-1.8V ● RDS(ON)= 2.20Ω @VGS=-1.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing C |
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ON Semiconductor |
N-Channel Transistor • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C VDG −40 Vdc VGS −35 Vdc IG 50 mAdc PD 350 mW 2.8 |
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Fairchild Semiconductor |
NPN General Purpose Amplifier IC = 0 IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V * IC = 150mA, VCE = 1.0V * IC = 500mA, VCE = 10V * IC = 150mA, IB = 15V IC = 500mA, IB = 50V IC = 150mA, IB = 15V IC = 500mA, IB = 50V IC = 20mA, VCE = 20V |
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Freescale Semiconductor |
LATERAL N-CHANNEL RF POWER MOSFETs • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection www.DataSheet4U.com • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Eq |
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Fairchild Semiconductor |
NPN General Purpose Amplifier |
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Fairchild Semiconductor |
PNP General Purpose Amplifier BSR15 Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics BV(BR)CEO BV(BR)CBO BV(BR)EBO ICBO ICEX IBEX hFE Parameter Test Condition IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -10µA, IC = 0 VCB = -50V VCB = -50V, T |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors 600 mA 800 mA 200 mA 150/C - 65…+ 150/C BSR 16 60 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 50 V IE = 0, - VCB = 50 V, Tj = 150/C IE = 0, - VCB = 60 V IE = 0, - VCB = 60 V, Tj = 150/C IC = |
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Fairchild Semiconductor |
PNP General Purpose Amplifier BSR16 Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics BV(BR)CEO BV(BR)CBO BV(BR)EBO ICBO ICEX IBEX hFE Parameter Test Condition IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -10µA, IC = 0 VCB = -50V VCB = -50V, TA |
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Fairchild Semiconductor |
NPN General Purpose Amplifier tion Derate above 25°C Thermal Resistance, Junction to Ambient Max *BSR17A 350 2.8 357 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation BSR17A NPN General Purpose Amplifier (conti |
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Fairchild Semiconductor |
NPN General Purpose Amplifier tion Derate above 25°C Thermal Resistance, Junction to Ambient Max *BSR17A 350 2.8 357 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation BSR17A NPN General Purpose Amplifier (conti |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors 0 mA 150/C - 65…+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 30 V IE = 0, VCB = 30 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 6 V IC = 10 mA, IB = 1 mA IC = |
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Desde 2024. D4U Semiconductor.
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