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ON Semiconductor BD8 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
BD876

Siemens Semiconductor Group
NPN SILICON PLANAR DARLINGTON TRANSISTORS
Datasheet
2
BD877

Siemens Semiconductor Group
NPN SILICON PLANAR DARLINGTON TRANSISTORS
Datasheet
3
BD809

ON Semiconductor
Plastic High Power Silicon Transistors

• High DC Current Gain
• These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @
Datasheet
4
BD863

Siemens Semiconductor Group
NPN SILICON DARLINGTON TRANSISTORS
Datasheet
5
BD866

Siemens Semiconductor Group
PNP SILICON DARLINGTON TRANSISTORS
Datasheet
6
BD879

Siemens Semiconductor Group
NPN SILICON PLANAR DARLINGTON TRANSISTORS
Datasheet
7
BD898

Comset Semiconductors
Silicon PNP Power Transistors
BD898
  – BD900
  – BD902 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=25°C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=100° C IE= 0
Datasheet
8
BD810

ON Semiconductor
Plastic High Power Silicon Transistors

• High DC Current Gain
• These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @
Datasheet
9
BD862

Siemens Semiconductor Group
PNP SILICON DARLINGTON TRANSISTORS
Datasheet
10
BD864

Siemens Semiconductor Group
PNP SILICON DARLINGTON TRANSISTORS
Datasheet
11
BD875

Siemens Semiconductor Group
NPN SILICON PLANAR DARLINGTON TRANSISTORS
Datasheet
12
BD878

Siemens Semiconductor Group
NPN SILICON PLANAR DARLINGTON TRANSISTORS
Datasheet
13
BD880

Siemens Semiconductor Group
NPN SILICON PLANAR DARLINGTON TRANSISTORS
Datasheet
14
BD896

Comset Semiconductors
Silicon PNP Power Transistors
BD898
  – BD900
  – BD902 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=25°C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=100° C IE= 0
Datasheet
15
BD861

Siemens Semiconductor Group
NPN SILICON DARLINGTON TRANSISTORS
Datasheet
16
BD865

Siemens Semiconductor Group
NPN SILICON DARLINGTON TRANSISTORS
Datasheet



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