ON Semiconductor B20 Hoja de datos

No.	parte #	Fabricante	Descripción
1	B20100G	ON Semiconductor	Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features • Highly Stable
2	EB202	SYS Semiconductors	TRANSISTORS HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST Product Specification EB202 WIDE SOA Absolute Maximum Ratings Tc=25°C PARAMETER SYMBOL VALUE Collector-Base Voltage Collector-Emitter Voltage Emitte
3	FSBB20CH60CL	Fairchild Semiconductor	Motion SPM 3 module • UL Certified No. E209204 (UL1557) • 600 V - 20 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Low-Loss, Short-Circuit Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Substrate • Built-In Bootstrap Diodes and Dedicated
4	PEB2084	Siemens Semiconductor Group	Quadruple Transceiver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 1.2 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 1.3 Pin Configuration
5	FSBB20CH60CT	Fairchild Semiconductor	Motion SPM 3 module • UL Certified No. E209204 (UL1557) • 600 V - 20 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Low-Loss, Short-Circuit Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Substrate • Built-In Bootstrap Diodes and Dedicated
6	FSBB20CH60BT	Fairchild Semiconductor	Smart Power Module • UL Certified No.E209204(SPM27-CC package) • Very low thermal resistance due to using DBC • Easy PCB layout due to built in bootstrap diode • 600V-20A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Divided negat
7	DS18B20	Dallas Semiconductor	Programmable Resolution 1-Wire Digital Thermometer Unique 1-Wire interface requires only one port pin for communication Multidrop capability simplifies distributed temperature sensing applications Requires no external components Can be powered from data line. Power supply range is 3.0V to 5.5V Zero s
8	EB203D	SY Semiconductors	EB SERIES TRANSISTORS ①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA ●APPLICATION：①FLUORESCENT LAMP ②ELECTRONIC BALLAST ●Absolute Maximum Ratings (Tc=25℃) PARAMETER Collector –Base Voltage Collector –Emitter Voltage Emitter –Base Voltage Collector Current Total
9	MBRB2045CT	General Semiconductor	SCHOTTKY RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low
10	MBRB2060CT	General Semiconductor	SCHOTTKY RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low
11	DS18B20X	Dallas Semiconductor	Flipchip 1-Wire Digital Thermometer • • • • • • Unique 1-wire interface requires only one port pin for communication Each device has a unique 64-bit serial code stored in an on-board ROM Multi-drop capability simplifies distributed temperature sensing applications Requires no external
12	FSBB20CH60F	Fairchild Semiconductor	Motion SPM 3 module • UL Certified No. E209204 (UL1557) • 600 V - 20 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Built-In Thermal Shutdown Function • Low-Loss, Short-Circuit Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Sub- strate •
13	MBRB2060CT	Thinki Semiconductor	20.0 Ampere Surface Mount Schottky Barrier Rectifiers For surface mounted application Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High sur
14	PEB2023	Siemens Semiconductor Group	ISDN DC Converter Circuit IDCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Definitions
15	MBRB2060CT	Inchange Semiconductor	Schottky Barrier Rectifier ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
16	B20H100G	ON Semiconductor	Switch-mode Power Rectifier and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • NRVBB Prefix for Automotive and Ot
17	FGB20N60SFD	Fairchild Semiconductor	IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A • High Input Impedance • Fast Switching : EOFF = 8 uJ/A • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC General Description Using novel field stop IGBT
18	BZX384-B20	General Semiconductor	Zener Diode ♦ Silicon Planar Power Zener Diodes ♦ The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage tolerance is ±5%. Replace “C” with “B” for ±2% tolerance. Other voltage tolerances and other Zener voltages are a
19	CYUSB2025	Cypress Semiconductor	USB and Mass Storage Peripheral Controller ■ Latest-generation storage support ❐ SD2.0/SDXC – UHS1 SDR50 / DDR50 Master ❐ eMMC 4.4 Master ❐ SDIO 3.0 Master ■ USB integration ❐ Certified USB 2.0 peripheral: Hi-Speed (HS), and Full-Speed (FS) only) ❐ Thirty-two physical endpoints ❐ Integrated t
20	FGB20N6S2	Fairchild Semiconductor	600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 7A • 200kHZ Operation at 390V, 5A • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 30nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . .