ON Semiconductor A10 Hoja de datos

No.	parte #	Fabricante	Descripción
1	A1013	Toshiba Semiconductor	2SA1013 ignificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Han
2	A1015	Toshiba Semiconductor	Silicon PNP Transistor cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab
3	A1048	Toshiba Semiconductor	2SA1048 the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“De
4	2SA1015	Toshiba Semiconductor	Silicon NPN TRANSISTOR cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab
5	A1012	Toshiba Semiconductor	PNP Epitaxial Silicon Transistor
6	FPA104	Fairchild Semiconductor	Light Reflection Emitter / Sensor Array r to prevent visible light from entering the phototransistor. Reduces Mechanical Design and Packaging Problems High Sensitivity Excellent Stability Low Temperature Coefficient Absolute Maximum Ratings Maximum Temperature and Humidity Storage Temp
7	ILA1062	IK Semiconductor	TELEPHONE SPEECH NETWORK - Low DC line voltage; operates down to 1.6V (excluding polarity guard) - Voltage regulator with adjustable static resistance - Provides a supply for external circuits - Symmetrical high-impedance inputs (64 kΩ) for dynamic, magnetic or piezo-electri
8	MBRA10100	Mospec Semiconductor	Schottky Barrier Rectifie Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 175 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic
9	A1020	Toshiba Semiconductor	2SA1020 20 µs IB1 Switching time Storage time tstg Input IB2 Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −1.5 A IC = −1 A, IB = −0.05 A IC = −1 A, IB = −0.05 A VCE = −2 V, IC = −0.5 A VCB
10	A1015L	Toshiba Semiconductor	Silicon PNP Transistor cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab
11	A1020	ON Semiconductor	One Watt High Current PNP Transistor • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C VCE 50 Vdc VCB
12	2SA1020	Toshiba Semiconductor	PNP Transistor ng conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Con
13	2SA1030	Hitachi Semiconductor	Silicon PNP Epitaxial Transistor 5 320 –0.8 –0.2 — 4.0 V V MHz pF Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCB =
14	TDA1085C	ON Semiconductor	Universal Motor Speed Controller http://onsemi.com • • • • • • • • On−Chip Frequency to Voltage Converter On−Chip Ramps Generator Soft−Start Load Current Limitation Tachogenerator Circuit Sensing Direct Supply from AC Line Security Functions Performed by Monitor Pb−Free Package is
15	A1049	Toshiba Semiconductor	2SA1049 operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Deratin
16	GAL20RA10	Lattice Semiconductor	High-Speed Asynchronous E2CMOS PLD Generic Array Logic • HIGH PERFORMANCE E2CMOS ® TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 83.3 MHz — 9 ns Maximum from Clock Input to Data Output — TTL Compatible 8 mA Outputs — UltraMOS® Advanced CMOS Technology • 50% to 75% REDUCTION IN POWER FROM BIPOLAR
17	FPA100	Fairchild Semiconductor	Emitter And Sensor Matched Pair Arrays ne source/sensor pairs in a single line on 0.100-inch centers, matching the format of standard-punched paper tape. The FPA101 has 12 source/sensor pairs in a single line on 0.250-inch centers, matching the row spacing of standard tab cards. The FPA10
18	KSA1015	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 Ordering Information Part Number KSA1015GRTA KSA1015YTA Marking A1015 A1015 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Collector 3. Base Ben
19	BTA10-600C	Inchange Semiconductor	Triacs ·With TO-220AB insulated package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light
20	Q62702-A1067	Siemens Semiconductor Group	Silicon Schottky Diode otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 30 V VR = 40 V Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 m