| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA |
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Holtek Semiconductor |
HT7130 · · · Low power consumption Low voltage drop Low temperature coefficient High input voltage (up to 24V) TO-92 and SOT-89 packages Applications · · Battery-powered equipment Communication equipment · Audio/Video equipment General Description Th |
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Toshiba Semiconductor |
TK30A06J3A e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage |
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NXP Semiconductors |
SMPS Controller 2.1 Distinctive features s Universal mains supply operation (70 V to 276 V AC) s High level of integration, resulting in a very low external component count s Fixed frequency operation 2.2 Green features s Cycle skipping mode at very low loads; inpu |
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Digitron Semiconductors |
1.5 WATT ZENER DIODES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristic Symbol DC p |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET 21 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.050 Ω @ VGS = 4.5 V. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). Applications DC/DC converter Motor drives D D G G S TO-25 |
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Fairchild Semiconductor |
(1.5KE Series) 1500 Watt Transient Voltage Suppressors • • • • • Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bid |
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Fairchild Semiconductor |
30A/ 1200V Hyperfast Diode • Hyperfast Recovery trr = 85 ns (@ IF = 30 A) • Max Forward Voltage, VF = 3.2 V (@ TC = 25°C) • 1200 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Switching Power Supplies • Power Switching Circui |
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Harris Semiconductor |
CMOS Quad Exclusive-OR Gate |
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Thinki Semiconductor |
(U16C05 - U16C60) 16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA |
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Fairchild Semiconductor |
Dual N-Channel MOSFET 5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 5 nC). High performance trench technology for extremely low RDS(ON). High power and current handling capability. These N-Chan |
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Vanguard International Semiconductor |
128Mb SDRAM ITEM tCLK tRAS tRCD tAC tRC Icc1 Clock Cycle Time (Min.) CL=2 CL=3 -7 7ns 45ns CL=2 CL=3 V28S20D 20ns 5.4ns 63ns 85mA 85mA 85mA 1mA P2V28S20/30/40ATP -75 -8 10ns 7.5ns 45ns 20ns 6ns 5.4ns 67.5ns 85mA 85mA 85mA 1mA 10ns 8ns 48ns 20ns 6ns 6ns 70ns 85 |
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Harris Semiconductor |
(CA3010A - CA3030A) Operational Amplifiers |
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Harris Semiconductor |
(CA3010A - CA3030A) Operational Amplifiers |
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Fairchild Semiconductor |
Advanced Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) IRLR/U230A BVDSS = 200 V RD |
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Taiwan Semiconductor Company |
(RGP30x) Glass Passivated Junction Fast Recovery Rectifiers High temperature metallurgically bonded constructed Plastic material used carries Underwriters Laboratory Classification 94V-0 Glass passivated cavity-free junction Capable of meeting environmental standards of MIL-S-19500 3.0 ampere operation at TA= |
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Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive off |
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Digitron Semiconductors |
30A ULTRA FAST RECTIFIERS Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Peak repetitive re |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor ● Ideal for automated placement ● Glass passivated chip junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity leve |
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Desde 2024. D4U Semiconductor.
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