| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Panasonic Semiconductor |
2SD2715 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) |
|
|
|
|
Toshiba Semiconductor |
2SD2012 olute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and |
|
|
|
|
Sanyo Semiconductor |
2SD1207 · Power supplies, relay drivers, lamp drivers, and automotive wiring. www.DataSheet4U.com Package Dimensions unit:mm 2006A [2SB892/2SD1207] Features · FBET and MBIT processed (Original process of SANYO). · Low saturation voltage. · Large current ca |
|
|
|
|
Toshiba Semiconductor |
2SD2462 solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and es |
|
|
|
|
Sanyo Semiconductor Corporation |
2SD438 |
|
|
|
|
Toshiba Semiconductor |
2SD2498 ARACTERISTICS (Tc = 25°C) 2SD2498 CHARACTERISTIC Collector Cut−off Current Emitter Cut−off Current Collector−Emitter Breakdown Voltage DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Frequency Co |
|
|
|
|
Inchange Semiconductor |
2SD5011 or-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 130 mA h |
|
|
|
|
Toshiba Semiconductor |
2SD2499 if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions” |
|
|
|
|
Mospec Semiconductor Corporation |
2SD869 |
|
|
|
|
Panasonic Semiconductor |
2SD2137 q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 s Absolute Maximum Ratings Parameter C |
|
|
|
|
Inchange Semiconductor |
2SD1413 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=25mA; IB=0 IC=2A ;IB=4mA IC=2A ;I |
|
|
|
|
Mospec Semiconductor |
2SD401A |
|
|
|
|
Panasonic Semiconductor |
2SD1276 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.2 φ 3.1±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage www.DataSh |
|
|
|
|
Inchange Semiconductor |
Power Transistor 1.6A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.5 V ICBO Collector Cutoff Current VCB= 1400V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE -1 DC Current Gain IC= 1A; VCE= 5V 15 40 hFE |
|
|
|
|
Inchange Semiconductor |
2SD1308 ollector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=2A; IB=2mA IC=2A; IB=2mA VCB=100V |
|
|
|
|
Panasonic Semiconductor |
2SD1266A • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings Ta = 25°C Parameter |
|
|
|
|
Hitachi Semiconductor |
2SD669A — — — 140 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V |
|
|
|
|
Toshiba Semiconductor |
2SD2088 decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor |
|
|
|
|
Mospec Semiconductor |
2SD635 |
|
|
|
|
Panasonic Semiconductor |
Silicon NPN Transistor q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO |
|
Desde 2024. D4U Semiconductor.
|