| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
Maximum Power 43 W BTL 4-ch Audio Power-IC • High power output : POUT MAX (1) = 43 W (typ.) P (VCC = 14.4 V, f = 1 kHz, JEITA max, RL = 4 Ω) : POUT MAX (2) = 39 W (typ.) (VCC = 13.7 V, f = 1 kHz, JEITA max, RL = 4 Ω) : POUT (1) = 26 W (typ.) (VCC = 14.4 V, f = 1 kHz, THD = 10%, RL = 4 Ω) : PO |
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NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET ● VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with h |
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ON Semiconductor |
Low Offset Voltage Dual Comparators • Wide Single−Supply Range: 2.0 Vdc to 36 Vdc • Split−Supply Range: ±1.0 Vdc to ±18 Vdc • Very Low Current Drain Independent of Supply Voltage: 0.4 mA • Low Input Bias Current: 25 nA • Low Input Offset Current: 5.0 nA • Low Input Offset Voltage: 5.0 |
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Fairchild Semiconductor |
Quad Comparator • Single or Dual Supply Operation • Wide Range of Supply Voltage LM2901, LM339/LM339A, LM239A: 2 ~ 36V (or ±1 ~ ±18V) • Low Supply Current Drain 800μA Typ. • Open Collector Outputs for Wired and Connectors • Low Input Bias Current 25nA Typ. • Low Inp |
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ON Semiconductor |
Small Signal Switching Transistor • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dis |
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ON Semiconductor |
60V PNP Transistor Description • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalpurpose amplifier or switch |
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National Semiconductor |
Low Power Dual Operational Amplifiers n Available in 8-Bump micro SMD chip sized package, (See AN-1112) n Internally frequency compensated for unity gain n Large dc voltage gain: 100 dB n Wide bandwidth (unity gain): 1 MHz (temperature compensated) n Wide power supply range: — Single sup |
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NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET ● VDS =82V,ID =90A RDS(ON) < 8.8 mΩ @ VGS=10V (Typ:7.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Special designed for convertors and power controls ● Good stability and uniformity with h |
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Fairchild Semiconductor |
General Purpose Transistor -150mA, IB= -15mA IC= -500mA, IB= -50mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA VCB= -10V, IE=0 f=1MHz IC= -50mA, VCE= -20V f=100MHz VCC= -30V, IC= -150mA IB1= -15mA VCC= -6V, IC= -150mA IB1=IB2= -15mA 200 45 100 75 100 100 100 50 Min. -60 -60 - |
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Digitron Semiconductors |
HIGH POWER RECTIFIERS Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Part number 1N3288 1N3289 1 |
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Central Semiconductor |
PNP SILICON QUAD TRANSISTOR 10V, IE=0, f=1.0MHz Cib VBE=2.0V, IC=0, f=1.0MHz ton VCC=30V, IC=150mA, IB1=15mA 30 toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 150 MAX 50 50 0.4 1.6 1.3 2.6 8.0 30 hFE VCE=10V, IC=10mA hFE VCE=10V, IC=150mA hFE VCE=10V, IC=300mA MPQ2906 MIN MAX 35 |
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Fairchild Semiconductor |
PNP Amplifier um ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Stora |
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ON Semiconductor |
Single Supply Quad Comparators • Single Supply Operation: 3.0 V to 36 V • Split Supply Operation: ±1.5 V to ±18 V • Low Input Bias Current: 25 nA (Typ) • Low Input Offset Current: ±5.0 nA (Typ) • Low Input Offset Voltage • Input Common Mode Voltage Range to GND • Low Output Satura |
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Central Semiconductor |
PNP SILICON TRANSISTOR mA, f=200MHz 200 VCB=10V, IE=0, f=1.0MHz 8.0 Cob Cib VEB=2.0V, IC=0, f=1.0MHz 30 ton VCC=30V, IC=150mA, IB1=15mA 45 toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 www.DataSheet.co.kr PN2906A PN2907A MIN MAX 10 50 60 60 5.0 0.4 1.6 1.3 2.6 200 8.0 30 45 1 |
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Fairchild Semiconductor |
Dual Differential Comparator • Single Supply Operation: 2V to 36V • Dual Supply Operation: 1V to 18V • Allow Comparison of Voltages Near Ground Potential • Low Current Drain 800A Typ. • Compatible with all Forms of Logic • Low Input Bias Current 25nA Typ. • Low Input Offset C |
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Fairchild Semiconductor |
Dual Operational Amplifier • Internally Frequency Compensated for Unity Gain • Large DC Voltage Gain: 100dB • Wide Power Supply Range: LM258/LM258A, LM358/LM358A: 3V~32V (or ±1.5V ~ 16V) LM2904 : 3V~26V (or ±1.5V ~ 13V) • Input Common Mode Voltage Range Includes Ground • Large |
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Freescale Semiconductor |
ISO K Line Serial Link Interface • • • • • • • • • • • Device Operates Over Wide Supply Voltage of 8.0 to 18 V Operating Temperature of -40 to 125°C MC33290D/R2 Interfaces Directly to Standard CMOS Microprocessors MCZ33290EF/R2 ISO K Line Pin Protected Against Shorts to Ground Therm |
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ON Semiconductor |
PNP Silicon Transistors • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Val |
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ON Semiconductor |
450mA Low Drop Voltage Regulator including overcurrent protection, overtemperature protection and a programmable microprocessor power good signal. The NCV4290 is available in the DPAK and D2PAK surface mount packages. The output is stable over a wide output capacitance and ESR rang |
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ON Semiconductor |
Single Supply Dual Operational Amplifiers • Short Circuit Protected Outputs • True Differential Input Stage • Single Supply Operation: 3.0 V to 32 V • Low Input Bias Currents • Internally Compensated • Common Mode Range Extends to Negative Supply • Single and Split Supply Operation • ESD Cla |
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Desde 2024. D4U Semiconductor.
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