| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
Quad Operational Amplifier • Internally Frequency Compensated for Unity Gain • Large DC Voltage Gain: 100dB • Wide Power Supply Range: LM324/LM324A : 3V~32V (or ±1.5 ~ 16V) LM2902/LM2902A: 3V~26V (or ±1.5V ~ 13V) • Input Common Mode Voltage Range Includes Ground • Large Output |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed |
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ON Semiconductor |
Single Supply Quad Operational Amplifier • Short Circuited Protected Outputs • True Differential Input Stage • Single Supply Operation: 3.0 V to 32 V • Low Input Bias Currents: 100 nA Maximum (LM324A) • Four Amplifiers Per Package • Internally Compensated • Common Mode Range Extends to Nega |
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Fairchild Semiconductor |
500V N-Channel MOSFET • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ. 90 nC) • Low Crss (Typ. 55 pF) • 100% Avalanche Tested • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced u |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 23.5 A, 600 V, RDS(on) = 240 mΩ (Max.) @ VGS = 10 V, ID = 11.8 A • Low Gate Charge (Typ. 110 nC) • Low Crss (Typ. 56 pF) • 100% Avalanche Tested D G G D S TO-3PN Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VD |
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ON Semiconductor |
N-Channel Power MOSFET • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • Lo |
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Westcode Semiconductors |
Distributed Gate Thyristor |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 166 mΩ (Typ.) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ. 65 nC) • Low Crss (Typ. 32 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply D |
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ON Semiconductor |
Dual N-Channel MOSFET • Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A • Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A • Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A • Max rDS(on) = 389 mW at VGS = 1.5 V, ID = 0.8 A • HBM ESD Protection Level > 2 kV (Note 3) • Very |
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ON Semiconductor |
N-Channel Power MOSFET • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power |
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ON Semiconductor |
Power MOSFET • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS4824NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Ha |
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Westcode Semiconductors |
Distributed Gate Thyristor |
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Fairchild Semiconductor |
500V N-Channel MOSFET • • • • • • • 24A, 500V, RDS(on) = 0.2Ω @VGS = 10 V Low gate charge ( typical 90 nC) Low Crss ( typical 55 pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode ( max, 250ns ) D ! " G! G DS ! " " " TO-3P FQA |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • 19.6A, 80V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S A |
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Siemens Semiconductor Group |
8-Bit CMOS Microcontroller USART Six interrupt sources, two priority levels Power saving modes Quick Pulse programming algorithm (C501-1E only) 2-Level program memory lock (C501-1E only) P-DIP-40, P-LCC-44, and P-MQFP-44 package Temperature ranges : SAB-C501 TA : 0 ˚C to 70 ˚ |
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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay drivers isc Product Specific |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A • Low gate charge ( Typ. 46nC) • Low Crss ( Typ. 25pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant UniFETTM Description These N-Channel enhancement mode power |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 150 mΩ (Typ.) @ VGS = 10 V, ID = 11.5 A • Low Gate Charge (Typ. 46 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairc |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 160 mΩ (Typ.) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ. 65 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply May 2014 Description UniFETTM |
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ON Semiconductor |
N-Channel Power MOSFET • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power |
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Desde 2024. D4U Semiconductor.
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