| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NCE Power Semiconductor |
N-Channel Power MOSFET ● VDS =40V,ID =150A RDS(ON)=1.09mΩ (typical) @ VGS=10V RDS(ON)=1.5mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free lead pl |
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Taiwan Semiconductor |
(HT11G - HT18G) Glass Passivated High Efficient Rectifiers - Glass passivated chip junction - High current capability - High reliability - High surge current capability - High efficiency, Low VF - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 6124 |
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Cypress Semiconductor |
Independent Clocking Quad Transceiver ■ Second-generation HOTLink® technology ■ Compliant to multiple standards ❐ ESCON, DVB-ASI, Fibre Channel and Gigabit Ethernet (IEEE802.3z) ❐ CPRI™ compliant ❐ 8B/10B coded data or 10 bit uncoded data ■ Quad channel transceiver operates from 195 to 1 |
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Cypress Semiconductor |
Prosumer Video Cable Equalizer ■ ■ ■ ■ Functional Description The CYV15G0103EQ is a multi rate adaptive equalizer designed to equalize and restore signals received over 75Ω coaxial cable. The equalizer meets SMPTE 292M, SMPTE 344M, and SMPTE 259M data rates. The CYV15G0103EQ is o |
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NCE Power Semiconductor |
N-Channel Power MOSFET ● VDS =40V,ID =150A RDS(ON)=1.6mΩ (typical) @ VGS=10V RDS(ON)=1.9mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free lead pla |
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General Semiconductor |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ Fast switchin |
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Siemens Semiconductor Group |
IGBT eristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.3 1.2 6.5 3 3.7 V VGE = VCE, IC = 0.6 mA Collector-emitter saturation voltage |
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Siemens Semiconductor Group |
IGBT otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 6.5 2.7 2.8 V VGE = VCE, IC = 0.4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj |
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Toshiba Semiconductor |
RECTIFIER STACK |
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ON Semiconductor |
RF Transistor • Small ON-resistance [Ron=2Ω (IB=3mA)] • Small output capacitance [Cob=1.2pF (VCB=10V)] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector |
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ON Semiconductor |
PNP Epitaxial Silicon Transistor • Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value |
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Siemens Semiconductor Group |
Ternary PIN Photodiode with Blocking Filter for 3rd Window older point and base plate (≥ 2 mm, 260 °C) Symbol Values 10 20 − 40 … + 85 1 10 Unit mA V °C mW s IF VR TA Tstg Φport ts Semiconductor Group 1 02.95 SRD 00314X SRD 00315X Characteristics All optical data refer to a coupled 10/125 µm SM fiber |
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Cypress Semiconductor |
Single-channel HOTLink Transceiver ■ Second-generation HOTLink® technology ■ Compliant to multiple standards ❐ ESCON®, DVB-ASI, fibre channel and gigabit ethernet (IEEE802.3z) ❐ CPRI™ compliant ❐ CYV15G0101DXB compliant to SMPTE 259M and SMPTE 292M ❐ 8B/10B encoded or 10-bit unencoded |
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Cypress Semiconductor |
Independent Clocking Quad Transceiver a at .D w w w — copper cables • Second-generation HOTLink technology • Fibre-Channel- and Gigabit-Ethernet-compliant 8B/10B-coded or 10-bit unencoded • Four independent channels — Each channel can operate at a different signaling rate • 8-bit encode |
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General Semiconductor |
(SUF15G/J) ULTRAFAST EFFICIENT RECTIFIER SUF15G and SUF15J Vishay Semiconductors formerly General Semiconductor Reverse Voltage 400 to 600V Forward Current 1.5A GP20 • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Glass passivated chip junction • Superf |
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Freescale Semiconductor |
RF LDMOS Wideband Integrated Power Amplifiers • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disa |
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Cypress Semiconductor |
Single-channel HOTLink Transceiver ■ Second-generation HOTLink® technology ■ Compliant to multiple standards ❐ ESCON®, DVB-ASI, fibre channel and gigabit ethernet (IEEE802.3z) ❐ CPRI™ compliant ❐ CYV15G0101DXB compliant to SMPTE 259M and SMPTE 292M ❐ 8B/10B encoded or 10-bit unencoded |
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Cypress Semiconductor |
Transceiver • Second-generation HOTLink® technology • Compliant to multiple standards — ESCON, DVB-ASI, SMPTE-292M, SMPTE-259M, Fibre Channel and Gigabit Ethernet (IEEE802.3z) — CPRI™ compliant www.DataSheet4U.com — CYW15G0403DXB compliant to OBSAI-RP3 • Per-ch |
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China Semiconductor Corporation |
(CSS-1014G / CSS-1015G) 1.0 Inch Single Digit Display 1. 1.0 inch (25.4mm) digit height. 2. Case mold type. 3. RoHS compliant. 4. Low power consumption. 5. Easy mounting on P.C. board or socket. Device Selection Guide Chip Material GaP GaP Emitted Color Yellow Green Yellow Green Model No. CSS-1014G CS |
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NCE Power Semiconductor |
Trench NPT IGBT z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=15A z High input impedance Applications z Inductive heating, Microwave oven, Inverter, UPS, etc. z Soft switching applications General Description |
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Desde 2024. D4U Semiconductor.
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