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ETC |
SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS * Fast switching PARTMARKING DETAILS FMMT2222 1BZ FMMT2222A 1P FMMT2222R 2P FMMT2222AR 3P COMPLEMENTARY TYPES FMMT2222 FMMT2907 FMMT2222A FMMT2907A FMMT2222 FMMT2222A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Coll |
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ETC |
SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR * Fast switching COMPLIMENTARY TYPES - FMMT2907 - FMMT2907A PARTMARKING DETAIL FMMT2907 FMMT2907A FMMT2907R FMMT2907AR FMMT2907 FMMT2907A FMMT2222 FMMT2222A 2BZ 2F 4P 5P FMMT2907 -40 -5 -600 330 -55 to +150 C B SOT23 E ABSOLUTE MAXIMUM |
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ETC |
SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR X. MAX. UNIT CONDITIONS V V V IC=-1mA, IB=0 IC=-0.1mA, IE=0 IE=-0.1mA, IC=0 VEB(off) =-0.4V VEB(off) =-0.4V µA VCE=-35V µA VCE=-35V 150 -0.4 -0.75 300 -0.4 -0.75 V V V V IC=-0.1mA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-150mA,VCE=-2V* IC= |
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Zetex Semiconductors |
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE FMMT458 PARTMARKING DETAIL 558 FMMT558 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Pea |
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ETC |
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR * 60 Volt VCEO 7 FMMT2484 E C PARTMARKING DETAIL 4G B SOT23 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MAX. UNIT V V V 10 10 10 0.35 0.95 30 100 20 175 200 250 500 µA ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Vo |
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MMT Electronics |
Character LCD Module |
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Diodes |
NPN SILICON LOW SATURATION TRANSISTOR BVCEO > 50V IC = 1.25A Continuous Collector Current 500mW Power Dissipation Low Saturation Voltage VCE(sat) < 330mV @ 1.25A RCE(SAT) = 160mΩ for a Low Equivalent on-Resistance Complementary PNP type: FMMTL720 Totally Lead-Free & Fully R |
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Sharp Electrionic Components |
3mmT-1/ Cylinder Type/ Colored Diffusion LED Lamps for Indicator 85 -25 to +85 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 -25 to +100 260 260 260 260 260 260 50 0.13 10 23 GaP GL3PR8 Red 50 0.40 30 84 GaAsP on GaP GL3HD8 Red 50 0.40 30 84 GL3HS8 Sunset orange GaAsP on GaP 50 0.40 30 84 GaAsP on G |
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Sharp Electrionic Components |
3mmT-1/ CylinderThin Type/ Colored Transparency/ Highluminosity LED Lamps for Backlight 1. @3mm(T-l) all resin mold 2. Colored transparency lens type 3. Wide viewing angle : +1 , ,0 0 k !-’, ..... 1 2 Pin connections 1, Anode ?. Cathode Unspecified tolerance : fO.2mm s Absolute Maximum Ratings (Ta=25°C) GL3UR43 GL3LR43 GL3PR43 GL3H |
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Diodes |
120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BVCEO > 60V IC = 1A Continuous Collector Current VCE(SAT)= 0.5V @1A 500mW Power Dissipation Low Saturation Voltage High hFE Min 300@250mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device |
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Diodes |
120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BVCEO > 120V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current 500mW Power Dissipation hFE Characterised up to 1A for High Current Gain Hold Up Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony F |
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ETC |
SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ansfer Ratio Output Capacitance Cobo Turn-on Time ton Turn-off Time Storage Time toff ts FMMT2369 FMMT2369A UNIT CONDITIONS. MIN. MAX. MIN. MAX. 40 40 V IC=10µA, IE=0 15 40 4.5 400 0.25 0.7 40 20 20 4 12 18 13 0.85 120 0.7 40 20 4 12 18 13 pF ns ns n |
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ETC |
SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR * Fast switching COMPLIMENTARY TYPES - FMMT2907 - FMMT2907A PARTMARKING DETAIL FMMT2907 FMMT2907A FMMT2907R FMMT2907AR FMMT2907 FMMT2907A FMMT2222 FMMT2222A 2BZ 2F 4P 5P FMMT2907 -40 -5 -600 330 -55 to +150 C B SOT23 E ABSOLUTE MAXIMUM |
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Zetex Semiconductors |
NPN SILICON PLANAR AVALANCHE TRANSISTOR * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL FMMT415 415 FMMT417 417 FMMT415 FMMT4 |
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Zetex Semiconductors |
SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS NIT CONDITIONS V V V IC=1mA, IB=0 IC=0.1mA, IE=0 IE=0.1mA, IC=0 VEB(off) =0.4V VEB(off) =3V µA VCE=35V µA VCE=35V 150 0.4 0.75 300 0.4 0.75 V V V V IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=150mA, VCE=1V* IC=500mA, VCE=2V* IC=150mA,IB=15 |
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ETC |
SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR X. MAX. UNIT CONDITIONS V V V IC=-1mA, IB=0 IC=-0.1mA, IE=0 IE=-0.1mA, IC=0 VEB(off) =-0.4V VEB(off) =-0.4V µA VCE=-35V µA VCE=-35V 150 -0.4 -0.75 300 -0.4 -0.75 V V V V IC=-0.1mA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-150mA,VCE=-2V* IC= |
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Zetex Semiconductors |
PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL617 L77 FMMTL717 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous |
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ON |
Thyristor Surge Protectors verstressed, Preventing Continued Unprotected Operation. • Surface Mount Technology (SMT) • Complies with GR1089 Second Level Surge Spec at 500 Amps 2x10 µsec Waveforms • Indicates UL Registered − File #E210057 • Device Marking: MMT10B230T3: RPDF; MM |
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ON Semiconductor |
Thyristor Surge Protectors http://onsemi.com BIDIRECTIONAL TSPD ( ) 50 AMP SURGE, 350 VOLTS • High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled • The MMT05B350T3 is used to help equipment meet various • • • • • • • regulatory requirements including: Bellcore |
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Zetex Semiconductors |
SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR quency Output Capacitance Input Capacitance Noise Figure hFE fT Cobo Cibo N 120 360 60 IC=-2mA, VCE=-1V* IC=-50mA, VCE=-1V* 250 MHz IC=-10mA, VCE=-20V, f=100MHz 4.5 pF VCB=-5V, IE=0, f=140KHz 10 pF VBE=-0.5V, IE=0, f=140KHz 4 dB IC=-200µA, VC |
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Desde 2024. D4U Semiconductor.
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