No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hynix |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb • JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface Posted CAS Programmable CAS Latency 3, 4, 5, 6 OCD (Off-Chip Driver Impedance Adjustment) |
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Rectron |
BIPOLAR TRANSISTORS * Power dissipation Pcm: 0.2 W (Tamb=25OC) * Collector current Icm: -0.2 A * Collector-base voltage V(BR)CBO: -40 V * Operationg and storage junction temperature range TJ,Tstg: -55OCto +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O r |
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Hynix Semiconductor |
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I |
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Hynix Semiconductor |
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I |
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ON Semiconductor |
Zener Voltage Regulators • 500 mW Rating on FR−4 or FR−5 Board • Wide Zener Reverse Voltage Range − 2.4 V to 110 V @ Thermal Equilibrium* • Package Designed for Optimal Automated Board Assembly • Small Package Size for High Density Applications • General Purpose, Medium Curr |
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ON Semiconductor |
High Voltage Switching Diode AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol V |
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MultiDimension |
Ultra-Low Power TMR Bipolar Switch and Benefits Applications Tunneling Magnetoresistance (TMR) Technology Utility Meters including Ultra Low Power Consumption at 1.5μA Water, Gas, and Heat Meters High Frequency Response up to 1kHz Solid State Switches Bipolar Latch |
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LITE-ON |
PNP General Purpose Transistor • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available(MMST2222A) MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) • Lead Free i |
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ON Semiconductor |
Switching Diode • SOD−123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−F |
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WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE Silicon Epitaxial Planar Die Construction Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0 C A |
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AiT Components |
SCHOTTKY DIODE They are designed for high –efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage Available |
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Hynix Semiconductor |
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I |
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Hynix Semiconductor |
240pin DDR3 SDRAM Unbuffered DIMMs and Ordering Information 1.1.1 Features 1.1.2 Ordering Information 1.2 Speed Grade & Key Parameters 1.3 Address Table 2. Pin Architecture 2.1 Pin Definition 2.2 Input/Output Functional Description 2.3 Pin Assignment 3. Functional Block Diagram 3.1 51 |
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Rectron |
SURFACE MOUNT ZENER DIODE * Wide Zener Reverse Voltage Range : 2.4V to 43V * 500mW Rating on FR-4 or FR-5 Board * Small Package Size for High Density Applications * Ldeally Suited for Automated Assembly Processes * ESD Rating of Class 3 (>16kV) per Human Body Model MECHANICAL |
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Microchip |
DC-20GHz GaAs MMIC SP2T Non-Reflective Switch • Wide operating range: DC –20 GHz Functional Block Diagram • Low insertion loss: <2 dB • High input P1dB: 24 dBm • Excellent isolation: >40 dB • High input IP3: 42 dBm • Fast switching: <10 ns • Non-reflective topology • Compact die size: 0.85 mm × |
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Microsemi |
DC-20GHz GaAs MMIC SP2T Non-Reflective Switch ....................................................................................................................................... 2 3 Electrical Specifications .................................................................................... |
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PAN JIT |
SURFACE MOUNT SILICON ZENER DIODES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOD-123, Molded Plastic • Terminals: Solderable per MIL-STD-750, Method |
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PAN JIT |
SURFACE MOUNT SILICON ZENER DIODES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOD-123, Molded Plastic • Terminals: Solderable per MIL-STD-750, Method |
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PAN JIT |
SURFACE MOUNT SILICON ZENER DIODES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOD-123, Molded Plastic • Terminals: Solderable per MIL-STD-750, Method |
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GME |
PNP Silicon Epitaxial Planar Transistor Power dissipation. Epitaxial planar die construction. Complementary to MMST3904. Also available in lead free version. Pb Lead-free MMST3906 APPLICATIONS General purpose application and switching application. ORDERING INFORMATION Type N |
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