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ON MMS DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
HYMP512S64CLP8-S5

Hynix
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb

• JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface Posted CAS Programmable CAS Latency 3, 4, 5, 6 OCD (Off-Chip Driver Impedance Adjustment)
Datasheet
2
MMST3906

Rectron
BIPOLAR TRANSISTORS
* Power dissipation Pcm: 0.2 W (Tamb=25OC) * Collector current Icm: -0.2 A * Collector-base voltage V(BR)CBO: -40 V * Operationg and storage junction temperature range TJ,Tstg: -55OCto +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O r
Datasheet
3
HYMP125U64CP8-Y5

Hynix Semiconductor
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version

• JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I
Datasheet
4
HYMP125U64CR8-Y5

Hynix Semiconductor
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version

• JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I
Datasheet
5
MMSZ5242BT1G

ON Semiconductor
Zener Voltage Regulators

• 500 mW Rating on FR−4 or FR−5 Board
• Wide Zener Reverse Voltage Range − 2.4 V to 110 V @ Thermal Equilibrium*
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• General Purpose, Medium Curr
Datasheet
6
MMSD103T1G

ON Semiconductor
High Voltage Switching Diode

 AEC−Q101 Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol V
Datasheet
7
MMS1X1H

MultiDimension
Ultra-Low Power TMR Bipolar Switch
and Benefits Applications
 Tunneling Magnetoresistance (TMR) Technology
 Utility Meters including
 Ultra Low Power Consumption at 1.5μA Water, Gas, and Heat Meters
 High Frequency Response up to 1kHz
 Solid State Switches
 Bipolar Latch
Datasheet
8
MMST2907A

LITE-ON
PNP General Purpose Transistor

• Ideal for Medium Power Amplification and Switching
• Complementary PNP Type available(MMST2222A) MECHANICAL DATA
• Case: SOT-323 Plastic
• Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)
• Lead Free i
Datasheet
9
MMSD4148

ON Semiconductor
Switching Diode

• SOD−123 Surface Mount Package
• High Breakdown Voltage
• Fast Speed Switching Time
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*
• These Devices are Pb−F
Datasheet
10
MMSD4148

WON-TOP
SURFACE MOUNT FAST SWITCHING DIODE

 Silicon Epitaxial Planar Die Construction
 Fast Switching Speed
 Surface Mount Package Ideally Suited for Automatic Insertion
 For General Purpose Switching Applications
 Plastic Material
  – UL Recognition Flammability Classification 94V-0 C A
Datasheet
11
MMSD301

AiT Components
SCHOTTKY DIODE
They are designed for high
  –efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications.



 Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage Available
Datasheet
12
HYMP164U64CR6-C4

Hynix Semiconductor
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version

• JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I
Datasheet
13
HMT125U7BFR8C

Hynix Semiconductor
240pin DDR3 SDRAM Unbuffered DIMMs
and Ordering Information 1.1.1 Features 1.1.2 Ordering Information 1.2 Speed Grade & Key Parameters 1.3 Address Table 2. Pin Architecture 2.1 Pin Definition 2.2 Input/Output Functional Description 2.3 Pin Assignment 3. Functional Block Diagram 3.1 51
Datasheet
14
MMSZ4706

Rectron
SURFACE MOUNT ZENER DIODE
* Wide Zener Reverse Voltage Range : 2.4V to 43V * 500mW Rating on FR-4 or FR-5 Board * Small Package Size for High Density Applications * Ldeally Suited for Automated Assembly Processes * ESD Rating of Class 3 (>16kV) per Human Body Model MECHANICAL
Datasheet
15
MMS006AA

Microchip
DC-20GHz GaAs MMIC SP2T Non-Reflective Switch

• Wide operating range: DC
  –20 GHz Functional Block Diagram
• Low insertion loss: <2 dB
• High input P1dB: 24 dBm
• Excellent isolation: >40 dB
• High input IP3: 42 dBm
• Fast switching: <10 ns
• Non-reflective topology
• Compact die size: 0.85 mm ×
Datasheet
16
MMS006PP3

Microsemi
DC-20GHz GaAs MMIC SP2T Non-Reflective Switch
....................................................................................................................................... 2 3 Electrical Specifications ....................................................................................
Datasheet
17
MMSZ5256A

PAN JIT
SURFACE MOUNT SILICON ZENER DIODES

• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case: SOD-123, Molded Plastic
• Terminals: Solderable per MIL-STD-750, Method
Datasheet
18
MMSZ5230A

PAN JIT
SURFACE MOUNT SILICON ZENER DIODES

• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case: SOD-123, Molded Plastic
• Terminals: Solderable per MIL-STD-750, Method
Datasheet
19
MMSZ5244A

PAN JIT
SURFACE MOUNT SILICON ZENER DIODES

• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case: SOD-123, Molded Plastic
• Terminals: Solderable per MIL-STD-750, Method
Datasheet
20
MMST3906

GME
PNP Silicon Epitaxial Planar Transistor

 Power dissipation.
 Epitaxial planar die construction.
 Complementary to MMST3904.
 Also available in lead free version. Pb Lead-free MMST3906 APPLICATIONS
 General purpose application and switching application. ORDERING INFORMATION Type N
Datasheet



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