| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor STICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1.0mA; |
|
|
|
|
ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ature November 2002 Value 400 700 9 12 25 6 12 18 36 110 -65 to 150 150 Unit V V V A A A A A A W oC oC 1/6 MJE13009 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.14 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherw |
|
|
|
|
Thinki Semiconductor |
(MJE13005 Series) Silicon NPN Power Transistor — — 4 2.0 Typ. — — — — — — — 2.5 Max. 10 10 — 30 1.5 1.6 — 4.0 V V MHz us Unit uA uA V ICBO IEBO VCEO hFE VCE(sat) IC=4.0A,IB=1.0A VBE(sat) IC=2.0A,IB=0.5A fT tS VCE=10V, IC=0.5A IB1=-IB2=0.5A, Page 1/1 © 2006 Thinki Semiconductor Co.,Ltd. http: |
|
|
|
|
ON Semiconductor |
Complementary Plastic Silicon Power Transistors • High DC Current Gain • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakages • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Base Voltage MJE170G, MJE |
|
|
|
|
ON Semiconductor |
Plastic Medium-Power NPN Silicon Transistor • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter |
|
|
|
|
Fairchild |
NPN Silicon Transistor = 4A, IB = 0.4A IC = 10A, IB = 3.3A VCE = 4V, IC = 4A VCE = 10V, IC = 500mA 2 20 5 Min. 60 Max. 700 1 5 5 100 1.1 8 1.8 V V V MHz Units V µA mA mA mA Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter On Vol |
|
|
|
|
Comset Semiconductors |
SILICON POWER TRANSISTOR ase Thermal Resistance From Junction to Free-Air Thermal Resistance Value 1.56 62.5 Unit °C/W 02/10/2012 COMSET SEMICONDUCTORS 1/3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS MJE13007 ELECTRICAL CHARACTERISTICS TC=25°C unless o |
|
|
|
|
Unisonic Technologies |
NPN Epitaxial Silicon Transistor * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - MJE13001G-x-AB3-A-R SOT-89 - MJE13001G-x-AB3-F-R SOT-89 MJE13001L-x-T92-B MJE13001G-x-T92-B TO- |
|
|
|
|
Inchange Semiconductor |
Silicon PNP Power Transistor AL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1.0mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Volta |
|
|
|
|
TGS |
NPN Silicon Power Transistors , IC=8.0A IC=8.0A,IB=1.6A IC=12.0A,IB=3.0A Base-Emitter Saturation Voltage Current Gain Bandwidth Product Storage Time Min. — — 400 8 6 — — — 4 — Typ. — — — — — — — — — 3.5 Max. 1.0 1.0 — 40 30 1.5 3.0 1.6 — 4 V MHz us V Unit mA mA V O ICEO IEBO VC |
|
|
|
|
MCC |
NPN Silicon Plastic-Encapsulate Transistor • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 0.2A • Collector-base Voltage 600V • Operating and storage junction temperature range: |
|
|
|
|
Central Semiconductor |
NPN Transistor |
|
|
|
|
Fairchild |
NPN Silicon Transistor = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω 4 1.6 3 0.7 110 8 5 Min. 300 400 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA IEBO hFE VCE(sa |
|
|
|
|
Fairchild |
PNP Epitaxial Silicon Transistor s VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = 10V IC = 10IB hFE, DC CURRENT GAIN 100 -1 VBE(sat) VCE(sat) -0.1 10 1 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC |
|
|
|
|
Unisonic Technologies |
NPN SILICON TRANSISTOR * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - MJE13001G-Q-x-AB3-A-R SOT-89 - MJE13001G-Q-x-AB3-F-R SOT-89 MJE13001L-Q-x-T92-F-B MJE13001G-Q-x-T |
|
|
|
|
ST Microelectronics |
SILICON NPN SWITCHING TRANSISTOR o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEV V CE = rated V CEV V EB = 9 V |
|
|
|
|
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ，。 High Voltage Capability High Speed Switching. / Applications 。 High frequency electronic lighting ballast applications. / Equivalent Circuit / Pinning 1 23 PIN1： Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See M |
|
|
|
|
UTC |
NPN SILICON POWER TRANSISTOR * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/rela |
|
|
|
|
Unisonic Technologies |
NPN SILICON TRANSISTOR * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 900V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/rela |
|
|
|
|
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor 。 High Speed Switching / Applications 。 High frequency electronic lighting ballast applications. / Equivalent Circuit / Pinning 12 3 PIN1：Base PIN 2：Collector PIN 3：Emitter / Marking Marking H01C ** http://www.fsbrec.com 1/6 MJE13001C |
|
Desde 2024. D4U Semiconductor.
|