| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode RBSOA IGBT & DIODE IN TO –264 25 A @ 90°C 38 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED C G C E G E CASE 340G –02 STYLE 5 TO –264 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 |
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ON |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode Robust RBSOA IGBT & DIODE IN TO –264 20 A @ 90°C 28 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED C G C E G E CASE 340G –02 STYLE 5 TO –264 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1 |
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ON |
Insulated Gate Bipolar Transistor r Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand |
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Desde 2024. D4U Semiconductor.
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