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ON MGW DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
CST3.58MGW

muRata
CERAMIC RESONATOR
1. Oscillation circuits do not require external load capacitors. 2. The series is stable over a wide temperature range. 3. The resonators are compact, light weight and exhibit superior shock resistance performance. 4. They enable the design of oscill
Datasheet
2
MGW12N120

ON
Insulated Gate Bipolar Transistor
llector
  –Gate Voltage (RGE = 1.0 MΩ) Gate
  –Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate a
Datasheet
3
MGW14N60ED

ON
Insulated Gate Bipolar Transistor
Datasheet
4
MGW12N120D

ON
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
rmination
• Robust RBSOA IGBT & DIODE IN TO
  –247 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED C G C E G E CASE 340K
  –01 STYLE 4 TO
  –247AE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector
  –Emitter Voltage Collector
  –Gate
Datasheet
5
MGW20N120

ON
Insulated Gate Bipolar Transistor
1.0 MΩ) Gate
  –Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short
Datasheet
6
MGW21N60ED

ON
Insulated Gate Bipolar Transistor
y Free Wheeling Diode is included in the Package
• Robust High Voltage Termination
• ESD Protection Gate
  –Emitter Zener Diodes C ™ Data Sheet MGW21N60ED IGBT IN TO
  –247 21 A @ 90°C 31 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED ON
  –VOLTAGE G G C E CASE 34
Datasheet



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