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ON MCR DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
MCR100-8

Digitron Semiconductors
SILICON CONTROLLED RECTIFIERS

 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Symbol Value Uni
Datasheet
2
MCR08B

ON
Sensitive Gate Silicon Controlled Rectifiers

• Sensitive Gate Trigger Current
• Blocking Voltage to 600 V
• Glass Passivated Surface for Reliability and Uniformity
• Surface Mount Package
• These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rat
Datasheet
3
MCR106-8

ON
Sensitive Gate Silicon Controlled Rectifiers

• Glass-Passivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices
• Practical Level Triggering and Holding Characteristics
• Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durabil
Datasheet
4
MCR265-4

ON Semiconductor
Silicon Controlled Rectifiers
age Gate Power (t = 8.3 ms, TC = 70°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 μs, TC = 70°C) Operating Junction Temperature Range IT(RMS) IT(AV) ITSM PGM PG(AV) IGM TJ 55 Amps 35 Amps 550 Amps 20 Watts 0.5 Watt 2.0 Amps −40 to +125 °C S
Datasheet
5
MCR100-8

CDIL
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
Datasheet
6
MCR100-8

LITE-ON
Sillicon Controlled Rectifiers
Sensitive Gate Allows Triggering by Microcontrollers and Other logic Circuits Blocking Voltage to 600 Volts On
  –State Current Rating of 0.25 Amperes RMS at 80℃ High Surge Current Capability — 9 Amperes Minimum and Maximum Values of IGT, VGT and IH Spe
Datasheet
7
MCR100-6

Motorola
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
rrent RMS (See Figures 1 & 2) (All Conduction Angles) Peak Forward Surge Current, TA = 25°C (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power — Forward, TA = 25°C Average Gate Power — Forward, TA = 25°C Peak Gat
Datasheet
8
MCR100-4

CDIL
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
Datasheet
9
MCR100-8

ON Semiconductor
Sensitive Gate Silicon Controlled Rectifiers
http://onsemi.com SCRs 0.8 A RMS 100 thru 600 V G A K
• Sensitive Gate Allows Triggering by Microcontrollers and Other






• Logic Circuits Blocking Voltage to 600 V On−State Current Rating of 0.8 A RMS at 80°C High Surge Current Capability
Datasheet
10
MCR100F-8

MCC
0.8 Ampere Silicon Rectifiers

• Blocking Voltage to 400V (MCR100-6)
• RMS on-state current to 0.8A
• General purpose switching x Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Halogen free available upon request by adding suffix "-HF" Symbol VRRM VDRM
Datasheet
11
MCR65-5

Digitron Semiconductors
SILICON CONTROLLED RECTIFIERS

 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit
Datasheet
12
MCR106-6

Littelfuse
Sensitive Gate Silicon Controlled Rectifiers

• Glass-Passivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices
• Practical Level Triggering and Holding Characteristics
• Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durab
Datasheet
13
MCR3818-8

Digitron Semiconductors
SILICON CONTROLLED RECTIFIERS

 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit
Datasheet
14
MCR22-4

BLUE ROCKET ELECTRONICS
Thyristor
,。 High dv/dt, very Low Forward “On” Voltage at High Current. / Applications 。 Applied to high Voltage control circuit. / Equivalent Circuit DATA SHEET / Pinning 123 PIN1:Anode PIN 2:Gate PIN 3:Cathode / hFE Classifications & Marking 。See
Datasheet
15
MCR72

Motorola
Silicon Controlled Rectifiers
Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ =
  –40 to 110°C) Circuit Fusing (t = 8.3 ms) Peak Gate Voltage (t IT(RMS) ITSM I2t VGM IGM PGM PG(AV) TJ Symbol VDRM or VRRM 50 100 200 400 600 800 8 100 40 ±5 1 5 0.75
  –40 to +110 Amps Amps A2s Volts
Datasheet
16
MCR69

Motorola
SILICON CONTROLLED RECTIFIERS
Datasheet
17
MCR68-1

Digitron Semiconductors
SILICON CONTROLLED RECTIFIERS

 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit
Datasheet
18
MCR202

New Jersey Semi-Conductor
SILICON CONTROLLED RECTIFIERS
26°C Average Gate Power - Forwerd,TA - 25°C Peak Gate Current - Forward, TA - 25°C (300 (is, 120PPS) Peak Gate Voltage - Reverie Operating Junction Temperature Range 9 Reted VRRMandVDRM(D Storage Temperature Renge THERMAL CHARACTERISTICS Chareen
Datasheet
19
MCR703A

Central Semiconductor
SURFACE MOUNT SILICON CONTROLLED RECTIFIERS
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ 10 μA IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C 200 μA IGT VD=12V, RL=10Ω 38 75 μA IH IT=50mA, RGK=1.0KΩ 0.25 2.0 mA VGT VD=12V, RL=10Ω 0.55 0.8
Datasheet
20
MCR704A

Central Semiconductor
SURFACE MOUNT SILICON CONTROLLED RECTIFIERS
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ 10 μA IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C 200 μA IGT VD=12V, RL=10Ω 38 75 μA IH IT=50mA, RGK=1.0KΩ 0.25 2.0 mA VGT VD=12V, RL=10Ω 0.55 0.8
Datasheet



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