Niko P55 Hoja de datos

No.	parte #	Fabricante	Descripción
1	P5504EVG	Niko	P-Channel Logic Level Enhancement Mode Field Effect Transistor eshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V,
2	P5506BVG	Niko	N-Channel Logic Level Enhancement Mode Field Effect Transistor = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source Resistance1 On-State IDSS ID(ON) VDS = 40V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS = 10V VGS = 4.5V, ID = 4.5A RD
3	P5506HVG	Niko	Dual N-Channel Enhancement Mode Field Effect Transistor = 250µA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V, TJ = 55 °C 60 1.0 1.5 2.5 ±100 1 10 µA V nA MIN TYP MAX UNIT 1 AUG-19-2004 NIKO-SEM www.DataSheet4U.com Dual N-Channel Enhancement Mode Fie
4	P5504EDG	Niko-Sem	P-Channel Logic Level Enhancement tate Drain Current 1 LIMITS UNIT MIN TYP MAX V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V -40 -1.5 -2 -3 V ±250 n
5	P5506HPG	NIKO-SEM	Dual N-Channel MOSFET On-State Drain Current1 IDSS ID(ON) Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS
6	P5506BDG	Niko	N-Channel MOSFET Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current1 Drain-Source On-State Resistance1 ID(ON) RDS(ON) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS
7	P5506NVG	Niko	N- & P-Channel Enhancement Mode Field Effect Transistor 0V, ID = 250µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 60
8	P55N02LD	Niko	N-Channel Logic Level Enhancement (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µ