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Nihon Inter Electronics |
Diode |
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Nihon Inter Electronics |
Diode |
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Nihon Inter Electronics |
Diode e Rth(c-f) －－－ 180g Approximate Weight Conditions Tj=150℃，VRM=VRRM Tj= 25℃，IFM=75A －ケース（トータル） Junction to Case, (Total) ｹｰｽ-ﾌｨﾝ（ﾄｰﾀﾙ），ｻｰﾏﾙｺﾝﾊﾟｳﾝﾄﾞ Case to Fin (Total), Greased （） Maximum Value 3 Unit mA 1. 23 V 0. 09 ℃/W 0. 06 ℃/W *1：１アー |
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Nihon Inter Electronics |
Diode * Isolated Base * 3 Phas e Bridge Circuit * DesignedPow er Circuit Board * High Surge C apabi lity * UL Recognize d, File No. E1871 84 75A/800V PT76S8 OUTLINE DRAWING TYPICAL APPLIC ATIONS * Rect ified For General Use Maximum Rat ings Parameter R |
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Nihon Inter Electronics |
Diode |
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Nihon Inter Electronics |
Diode th(j-c) Thermal Resistance Rth(c-f) －－－ 180g Approximate Weight Conditions Tj=150℃，VRM=VRRM Tj= 25℃，IFM=75A －ケース（トータル） Junction to Case, (Total) ｹｰｽ-ﾌｨﾝ（ﾄｰﾀﾙ），ｻｰﾏﾙｺﾝﾊﾟｳﾝﾄﾞ Case to Fin (Total), Greased （） Maximum Value 10 Unit mA 1. 25 V |
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Nihon Inter Electronics |
Diode |
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Desde 2024. D4U Semiconductor.
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