No. | parte # | Fabricante | Descripción | Hoja de Datos |
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New Jersey Semi-Conductor |
General Purpose Plastic Rectifiers lengths at TA = IR(AV) 30 75°C Typical thermal resistance (Note 1) R9JA 50 Operating junction and storage temperature range TJ, TSTG -SO to +150 Unit V V V A A MA °C/W °c Electrical Characteristics Ratings at 2S'C ambient temperature unles |
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New Jersey Semi-Conductor |
GLASS ZENER DIODES R JPriON«l AlTHIN f A U D B B E A T SLUGS IF A»v S H A L L BF iNCi.urjEO WITHIN rmscviiNDm But NO! SUB IE n !U THF- VlMMjM L I M I T Of B J LEftD O U W t T f R ^ ^ O T CONTI-LiLLcC Ih ZONE F TO -ILO-.V^OFI F[«5H LEAD FINISH aulLDUPir-.O WIMJR IBflEG' |
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New Jersey Semi-Conductor |
TRIPLE DIFFUSED PLANER TYPE NPN TRANSISTOR |
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New Jersey Semi-Conductor |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
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New Jersey Semi-Conductor |
GLASS ZENER DIODES R JPriON«l AlTHIN f A U D B B E A T SLUGS IF A»v S H A L L BF iNCi.urjEO WITHIN rmscviiNDm But NO! SUB IE n !U THF- VlMMjM L I M I T Of B J LEftD O U W t T f R ^ ^ O T CONTI-LiLLcC Ih ZONE F TO -ILO-.V^OFI F[«5H LEAD FINISH aulLDUPir-.O WIMJR IBflEG' |
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New Jersey Semi-Conductor |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
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New Jersey Semi-Conductor |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
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New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
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New Jersey Semi-Conductor |
Silicon NPN Transistor |
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New Jersey Semi-Conductor |
NPN HIGH SPEED SATURATED LOGIC SWITCHES |
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New Jersey Semi-Conductor |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
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New Jersey Semi-Conductor |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
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New Jersey Semi-Conductor |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
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New Jersey Semi-Conductor |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
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New Jersey Semi-Conductor |
N-CHANNEL JFET |
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New Jersey Semi-Conductor |
RF & MICROWAVE TRANSISTORS |
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New Jersey Semi-Conductor |
(1N5008A - 1N5042A) DIODE |
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New Jersey Semi-Conductor |
(1N5008A - 1N5042A) DIODE |
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New Jersey Semi-Conductor |
(1N5008A - 1N5042A) DIODE |
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New Jersey Semi-Conductor |
N-Channel Enhancement Mode MOSPOWER ±1 + 15, -0.3 1 3.9 + 15, -0.3 1 3.9 W 0.031 0.031 W/° C W/° C 0.008 -55 To +150 300 0.008 Tstg Lead Temperature -55 To +150 300 °C ° c 1 Pulse Test: Pulsewidth < 300Msec, Duty Cycle < 2% 2 1 Sec Continuous Power Single Pulse Power Dera |
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