New Jersey Semi-Conductor 1N5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	1N4001	New Jersey Semi-Conductor	General Purpose Plastic Rectifiers lengths at TA = IR(AV) 30 75°C Typical thermal resistance (Note 1) R9JA 50 Operating junction and storage temperature range TJ, TSTG -SO to +150 Unit V V V A A MA °C/W °c Electrical Characteristics Ratings at 2S'C ambient temperature unles
2	1N4372	New Jersey Semi-Conductor	GLASS ZENER DIODES R JPriON«l AlTHIN f A U D B B E A T SLUGS IF A»v S H A L L BF iNCi.urjEO WITHIN rmscviiNDm But NO! SUB IE n !U THF- VlMMjM L I M I T Of B J LEftD O U W t T f R ^ ^ O T CONTI-LiLLcC Ih ZONE F TO -ILO-.V^OFI F[«5H LEAD FINISH aulLDUPir-.O WIMJR IBflEG'
3	2SC3725	New Jersey Semi-Conductor	TRIPLE DIFFUSED PLANER TYPE NPN TRANSISTOR
4	BC257	New Jersey Semi-Conductor	PNP SILICON PLANAR EPITAXIAL TRANSISTOR
5	1N980A	New Jersey Semi-Conductor	GLASS ZENER DIODES R JPriON«l AlTHIN f A U D B B E A T SLUGS IF A»v S H A L L BF iNCi.urjEO WITHIN rmscviiNDm But NO! SUB IE n !U THF- VlMMjM L I M I T Of B J LEftD O U W t T f R ^ ^ O T CONTI-LiLLcC Ih ZONE F TO -ILO-.V^OFI F[«5H LEAD FINISH aulLDUPir-.O WIMJR IBflEG'
6	BC308	New Jersey Semi-Conductor	PNP SILICON PLANAR EPITAXIAL TRANSISTOR
7	BC321	New Jersey Semi-Conductor	PNP SILICON PLANAR EPITAXIAL TRANSISTOR
8	BDT60C	New Jersey Semi-Conductor	PNP SILICON POWER DARLINGTONS
9	2SC313	New Jersey Semi-Conductor	Silicon NPN Transistor
10	2N834	New Jersey Semi-Conductor	NPN HIGH SPEED SATURATED LOGIC SWITCHES
11	BC258	New Jersey Semi-Conductor	PNP SILICON PLANAR EPITAXIAL TRANSISTOR
12	BC259	New Jersey Semi-Conductor	PNP SILICON PLANAR EPITAXIAL TRANSISTOR
13	BC309	New Jersey Semi-Conductor	PNP SILICON PLANAR EPITAXIAL TRANSISTOR
14	BC322	New Jersey Semi-Conductor	PNP SILICON PLANAR EPITAXIAL TRANSISTOR
15	2N5670	New Jersey Semi-Conductor	N-CHANNEL JFET
16	2N3375	New Jersey Semi-Conductor	RF & MICROWAVE TRANSISTORS
17	1N5013A	New Jersey Semi-Conductor	(1N5008A - 1N5042A) DIODE
18	1N5016A	New Jersey Semi-Conductor	(1N5008A - 1N5042A) DIODE
19	1N5017A	New Jersey Semi-Conductor	(1N5008A - 1N5042A) DIODE
20	VN2222KM	New Jersey Semi-Conductor	N-Channel Enhancement Mode MOSPOWER ±1 + 15, -0.3 1 3.9 + 15, -0.3 1 3.9 W 0.031 0.031 W/° C W/° C 0.008 -55 To +150 300 0.008 Tstg Lead Temperature -55 To +150 300 °C ° c 1 Pulse Test: Pulsewidth < 300Msec, Duty Cycle < 2% 2 1 Sec Continuous Power Single Pulse Power Dera