| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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New Japan Radio |
High Quality Audio Dual Operational Amplifier ●Operating Voltage ●Output noise ●Input Offset Voltage ●Input Bias Current ●Voltage Gain ●Slew Rate ●Bipolar Technology ●Package Outline Vopr = ±3.5V to ±16V 4.5nV/√Hz at f=1kHz 0.3mV typ. 3mV max. 100nA typ. 500nA max. at Ta=25°C 110dB typ. 5V/µs t |
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New Japan Radio |
Dual Operational Amplifier ●Operating Voltage ●Low Noise ●THD ●Slew Rate ●Channel Separation ●High Output Current ●Phase Margin ●Input Offset Voltage ●Input Bias Current ●Voltage Gain ●J-FET technology ●Package Outline ±3.5V to ±16V 8nV/√Hz typ. 0.00004% typ. (Av=1) 25V/µs ty |
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New Japan Radio |
2-Channel Electronic Volume Operating Voltage ±8.5 to ±18V 3-Wired Serial Control Chip Address Select Function Selectable 8-Chip Address Available for using eight chips on same serial bus line Low Output Noise *It conforms to the characteristic of an external op |
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New Japan Radio |
Dual Operational Amplifier ●Operating Voltage ●Output noise ●Input Offset Voltage ●Input Bias Current ●Voltage Gain ●Slew Rate ●Bipolar Technology ●Package Outline Vopr=±9V to ±16V 9.5nV/ √ Hz at f=1kHz 0.8mV typ. 5mV max. 200pA typ. 800pA max. at Ta=25°C 105dB typ. 12V/μs ty |
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New Japan Radio |
Single Operational Amplifier ● High-quality sound ● Operating Voltage ● Operating Current ● Low Input Bias Current ● Low Noise ● Ultralow Distortion ● High Slew Rate ● Gain Bandwidth Product ● J-FET Input ● Package Outline ±3.5V to ±18V 5.8mA typ. 5pA typ. 7.5nV/√Hz typ. at f=1 |
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New Japan Radio |
Dual Operational Amplifier 2.1nV/Hz low noise, 10MHz wide gain bandwidth, 0.0009% low distortion, 600Ω drive capability, -40°C to +125°C operating temperature range, and various reliabilities and conveniences are improved. It is the best for audio preamplifiers, active filter |
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New Japan Radio |
Dual Operational Amplifier ●Operating Voltage ●Output noise ●Input Offset Voltage ●Input Bias Current ●Voltage Gain ●Slew Rate ●Bipolar Technology ●Package Outline Vopr = 3.5V to 16V 4.5nV/√Hz at f=1kHz 0.3mV typ. 3mV max. 100nA typ. 500nA max. at Ta=25°C 110dB typ. 5V/s t |
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Desde 2024. D4U Semiconductor.
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