National Semiconductor NB2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	NB213	National Semiconductor	500mA medium current driver transistors [!J package and lead coding • 35 to 65 Volt at 500 mA collector ratings • 1.2 Watts practical power dissipation (TO-92 PLUSTM) ... -~azz. (,W...). C'I • 400 mV guaranteed VCE (sat) characteristics at Ic = 100 mA and IB = 2 mA • Matched HFE groupi
2	NB222	National Semiconductor	500mA medium current driver transistors [!J package and lead coding • 35 to 65 Volt at 500 mA collector ratings • 1.2 Watts practical power dissipation (TO-92 PLUSTM) ... -~azz. (,W...). C'I • 400 mV guaranteed VCE (sat) characteristics at Ic = 100 mA and IB = 2 mA • Matched HFE groupi
3	NB211	National Semiconductor	500mA medium current driver transistors [!J package and lead coding • 35 to 65 Volt at 500 mA collector ratings • 1.2 Watts practical power dissipation (TO-92 PLUSTM) ... -~azz. (,W...). C'I • 400 mV guaranteed VCE (sat) characteristics at Ic = 100 mA and IB = 2 mA • Matched HFE groupi
4	NB223	National Semiconductor	500mA medium current driver transistors [!J package and lead coding • 35 to 65 Volt at 500 mA collector ratings • 1.2 Watts practical power dissipation (TO-92 PLUSTM) ... -~azz. (,W...). C'I • 400 mV guaranteed VCE (sat) characteristics at Ic = 100 mA and IB = 2 mA • Matched HFE groupi
5	NB221	National Semiconductor	500mA medium current driver transistors [!J package and lead coding • 35 to 65 Volt at 500 mA collector ratings • 1.2 Watts practical power dissipation (TO-92 PLUSTM) ... -~azz. (,W...). C'I • 400 mV guaranteed VCE (sat) characteristics at Ic = 100 mA and IB = 2 mA • Matched HFE groupi
6	NB212	National Semiconductor	500mA medium current driver transistors [!J package and lead coding • 35 to 65 Volt at 500 mA collector ratings • 1.2 Watts practical power dissipation (TO-92 PLUSTM) ... -~azz. (,W...). C'I • 400 mV guaranteed VCE (sat) characteristics at Ic = 100 mA and IB = 2 mA • Matched HFE groupi