No. | parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
|
|
National Semiconductor |
High Performance Delta-Sigma Low Power Dual PLLatinum Frequency Synthesizers Quadruple Modulus Prescalers for Lower Divide Ratios ■ RF PLL: 16/17/20/21 or 32/33/36/37 ■ IF PLL: 8/9 or 16/17 Advanced Delta Sigma Fractional Compensation ■ 12 bit or 22 bit selectable fractional modulus ■ Up to 4th order programmable delta-sigma |
|
|
|
National Semiconductor |
Ultra Low Power Dual Frequency Synthesizer n Ultra low current consumption n 2.7V to 5.5V operation n Selectable synchronous and asynchronous powerdown mode: ICC = 1 µA (typ) n Dual modulus prescaler: 64/65 or 128/129 n Selectable charge pump TRI-STATE® mode n Selectable charge pump current l |
|
|
|
National Semiconductor |
Dual Frequency Synthesizer System low current consumption: 10 mA at 2.8 V when operating in the PDC800 mode. LMX2525 is available in a 24-pin leadless leadframe package (LLP). Features n Small Size 5.0 mm X 4.0 mm X 0.75 mm 24-Pin LLP Package n RF Synthesizer System Two Integrated V |
|
|
|
National Semiconductor |
High Performance Delta-Sigma Low Power Dual PLLatinum Frequency Synthesizers Quadruple Modulus Prescalers for Lower Divide Ratios n RF PLL: 16/17/20/21 or 32/33/36/37 n IF PLL: 8/9 or 16/17 Advanced Delta Sigma Fractional Compensation n 12 bit or 22 bit selectable fractional modulus n Up to 4th order programmable delta-sigma |
|
|
|
National Semiconductor |
Micro-Module Integrated Bluetooth 1.2 Baseband Controller and Radio point-to-point and point-to-multipoint link management, supporting data rates up to 723 kbps. The radio employs an integrated antenna filter and switch to minimize the number of external components. The radio has a heterodyne receiver architecture wi |
|
|
|
National Semiconductor |
Single Chip Radio Transceiver on-chip voltage regulation to allow supply voltages ranging from 3.0V to 5.5V. Two additional voltage regulators provide a stable supply source to external discrete stages in the Tx and Rx chains. The IF amplifier, high gain limiting amplifier, and d |
|
|
|
National Semiconductor |
High Performance Delta-Sigma Low Power Dual PLLatinum Frequency Synthesizers Quadruple Modulus Prescalers for Lower Divide Ratios n RF PLL: 16/17/20/21 or 32/33/36/37 n IF PLL: 8/9 or 16/17 Advanced Delta Sigma Fractional Compensation n 12 bit or 22 bit selectable fractional modulus n Up to 4th order programmable delta-sigma |
|
|
|
National Semiconductor |
Intermediate Frequency Receiver Y Y Y Y Y Y Y Y Typical operation at 110 MHz RF sensitivity to b75 dBm RSSI sensitivity to b 82 dBm High gain (70 dB) limiting amplifier Average current consumption 480 mA for DECT handset (burst mode) a 3V operation Power down mode for increased |
|
|
|
National Semiconductor |
PLLatinum Ultra Low Power Frequency Synthesizer very low current consumption, typically 2.3 mA at 3.0V. The LMX2310/1/2/3U are manufactured using National’s 0.5µ ABiC V silicon BiCMOS process and is available in 20-pin CSP packages. Features n n n n RF operation up to 2.5 GHz 2.7V to 5.5V operati |
|
|
|
National Semiconductor |
High Performance Delta-Sigma Low Power Dual PLLatinum Frequency Synthesizers Quadruple Modulus Prescalers for Lower Divide Ratios n RF PLL: 8/9/12/13 or 16/17/20/21 n IF PLL: 8/9 or 16/17 Advanced Delta Sigma Fractional Compensation n 12 bit or 22 bit selectable fractional modulus n Up to 4th order programmable delta-sigma mo |
|
|
|
National Semiconductor |
Micro-Module Integrated Bluetooth 2.0 Baseband Controller and Radio point-to-point and point-to-multipoint link management, supporting data rates up to 723 kbps. The radio employs an integrated antenna filter and switch to minimize the number of external components. The radio has a heterodyne receiver architecture wi |
|
|
|
National Semiconductor |
PLLatinum 2.7 GHz Low Power Dual Modulus Prescaler for RF Personal Communications low current consumption; typically 7.0 mA at 5V VCC The LMX5080 is available in a 8-pin Small Outline (SOP) surface mount plastic package. Features 2.7V to 5.5V operation Low current consumption: 7 mA (typ) @ 5V −40˚C to +85˚C low noise CMOS output |
|
|
|
National Semiconductor |
Dual Low Power Frequency Synthesizer very low current consumption; typically LMX2350 (2.5 GHz) 6.75 mA, LMX2352 (1.2 GHz) 5.00 mA at 3.0V. The LMX2350/2352 are available in a 24-pin TSSOP surface mount plastic package. Features n 2.7 V to 5.5 V operation n Low current consumption LMX235 |
|
|
|
National Semiconductor |
1.1 GHz Frequency Synthesizer Y Y Y Y Y Y RF operation up to 1 1 GHz 2 7V to 5 5V operation Low current consumption ICC e 6 mA (typ) at VCC e 3V Dual modulus prescaler 64 65 or 128 129 Internal balanced low leakage charge pump Small-outline plastic surface mount JEDEC 0 150 wid |
|
|
|
National Semiconductor |
0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer Y Y Y Y Y Y Y Y Y Wideband RF operation from 0 1 GHz to 2 0 GHz No external biasing components necessary 3V operation LNA input and output ports matched to 50X Mixer input ports matched to 50X output port matched to 200X Doubly balanced Gilbert ce |
|
|
|
National Semiconductor |
PLLatinumTM 2.0 GHz Frequency Synthesizer very low current consumption, typically 3.5 mA at 3.75V. The charge pump provides 4mA output current. The LMX2322 is manufactured using National’s ABiC V BiCMOS process and is packaged in a 16 pin TSSOP and a 16 pin Chip Scale Package (CSP). Feature |
|
|
|
National Semiconductor |
Radio Transceiver for DECT Fully integrated 2.4 GHz CMOS low-IF transceiver Low power consumption On-chip Voltage Controlled Oscillator (VCO) On-chip low noise amplifier (LNA) Open-loop modulation On chip Modulation Gain Amplifier (MGA) On-chip timing control Four digital (5 m |
|
|
|
National Semiconductor |
Ultra Low Power Dual Frequency Synthesizer n Ultra low current consumption n 2.7V to 5.5V operation n Selectable synchronous and asynchronous powerdown mode: ICC = 1 µA (typ) n Dual modulus prescaler: 64/65 or 128/129 n Selectable charge pump TRI-STATE® mode n Selectable charge pump current l |
|
|
|
National Semiconductor |
1.1 GHz Frequency Synthesizer Y Y Y Y Y Y RF operation up to 1 1 GHz 2 7V to 5 5V operation Low current consumption ICC e 6 mA (typ) at VCC e 3V Dual modulus prescaler 64 65 or 128 129 Internal balanced low leakage charge pump Small-outline plastic surface mount JEDEC 0 150 wid |
|
|
|
National Semiconductor |
Low Cost Dual Frequency Synthesizer n VCC = 2.7V to 3.6V operation n Low current consumption: 4 mA @ 3V (typ) for LMX1601 5 mA @ 3V (typ) for LMX1600 or LMX1602 n PLL Powerdown mode: ICC = 1 µA typical n Dual modulus prescaler: — 2 GHz/500 MHz option: (Main) 32/33 (Aux) 8/9 — 1.1 GHz/5 |
|