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National Semiconductor |
N-Channel Monolithic Dual JFETs V DG - 20V, Dl - 200 jiA iDSS 9fs gfs gos gos C, ss C rss NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Output Conductance Common-Source Inp |
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National Semiconductor |
N-Channel Monolithic Dual JFET ed) Gate-Reverse Current CONDITIONS V G S--20V,V DS = bvgss VGS(OFF) VGS(f) Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current Static Drain Source "ON" Resistance Common-Source Forward Transcondu |
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National Semiconductor |
N-Channel Monolithic Dual JFET ductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance VGS = -15V, V DS =0 lG = - 1uA, V DS =0 VDS = 10V, Iq = 1 nA 150 C vdg = 10V, Dl = 5 mA 12SX vds = 10V, V G s = 0V, (Note 1) f |
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National Semiconductor |
N-Channel Monolithic Dual JFETs V DG - 20V, Dl - 200 jiA iDSS 9fs gfs gos gos C, ss C rss NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Output Conductance Common-Source Inp |
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National Semiconductor |
N-Channel Monolithic Dual JFET = -1pA,V DS =0 Vqs= 10V, Dl = 1 nA VDG = 10V, Dt = 30 ^A 'OSS 9fs 9os „ _ 9os NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacit |
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National Semiconductor |
N-Channel Monolithic Dual JFET = -1pA,V DS =0 Vqs= 10V, Dl = 1 nA VDG = 10V, Dt = 30 ^A 'OSS 9fs 9os „ _ 9os NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacit |
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National Semiconductor |
N-Channel Monolithic Dual JFET = -1pA,V DS =0 Vqs= 10V, Dl = 1 nA VDG = 10V, Dt = 30 ^A 'OSS 9fs 9os „ _ 9os NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacit |
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National Semiconductor |
N-Channel Monolithic Dual JFET 12) 01 1 S1 01 2 D1 3 G1 5 S2 6 D2 7 G2 Electrical Characteristics (25'c unless otherwise noted) PARAMETER Gate Reverse Current CONDITIONS V G S- 30V,V DS -0 BVGSS v GS(off) Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage |
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National Semiconductor |
N-Channel Monolithic Dual JFET ent V GS = -30V, V DS ^Q lG = 1 /J A, V DS = VDS- 20V, Dl = 1 nA V D G = 20V, Dl = 200 /iA 150"C PIN FET (12) 1 SI 2 D1 3 G1 5 S2 6 D2 7 G2 MIN MAX -250 PA -250 nA -40 -0,7 -4 V -0.2 -3.8 -100 PA IDSS 9fs yos 9os Cjss Sat |
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National Semiconductor |
N-Channel JFETs ce Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time V G S=-15V, V DS »0 Iq = -1mA, v ds =o 150°C V D S = 5V,Vgs = -10V 150°C VdS=5V, Dl = 3nA Vds = 1 5V . V G |
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National Semiconductor |
N-Channel Monolithic Dual JFET ent V GS = -30V, V DS ^Q lG = 1 /J A, V DS = VDS- 20V, Dl = 1 nA V D G = 20V, Dl = 200 /iA 150"C PIN FET (12) 1 SI 2 D1 3 G1 5 S2 6 D2 7 G2 MIN MAX -250 PA -250 nA -40 -0,7 -4 V -0.2 -3.8 -100 PA IDSS 9fs yos 9os Cjss Sat |
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National Semiconductor |
N-Channel Monolithic Dual JFET ent V GS = -30V, V DS ^Q lG = 1 /J A, V DS = VDS- 20V, Dl = 1 nA V D G = 20V, Dl = 200 /iA 150"C PIN FET (12) 1 SI 2 D1 3 G1 5 S2 6 D2 7 G2 MIN MAX -250 PA -250 nA -40 -0,7 -4 V -0.2 -3.8 -100 PA IDSS 9fs yos 9os Cjss Sat |
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National Semiconductor |
N-Channel Monolithic Dual JFET ent V GS = -30V, V DS ^Q lG = 1 /J A, V DS = VDS- 20V, Dl = 1 nA V D G = 20V, Dl = 200 /iA 150"C PIN FET (12) 1 SI 2 D1 3 G1 5 S2 6 D2 7 G2 MIN MAX -250 PA -250 nA -40 -0,7 -4 V -0.2 -3.8 -100 PA IDSS 9fs yos 9os Cjss Sat |
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National Semiconductor |
N-Channel JFET 0'C Gate-Source Cutoff Voltage Gate Source Voltage V D s - 15V, Id = 100 ii V DS - 15V mA Dl = 1.2 In- 1 mA lO -0.7 mA mA Di = 0.4 In = 0-25 mA Saturation Drain _ Current V D S= 1BV, VQS" 0, (Note 1) Drain-Source ON Resistance vgs-o, di = o |
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National Semiconductor |
N-Channel JFETs TIONS VDS = 0, VQS--20V T= 150°C 2N5361 MIN MAX -100 -100 2N5362 MIN MAX -100 -100 2N5363 MIN MAX 100 -100 2N5364 MIN MAX 100 -100 UNITS pA nA Gate-Source Cutoff VGS(off) .. . Voltage BVGSS Gate-Source Breakdown Voitage 'DSS Vqs Saturation |
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National Semiconductor |
N-Channel JFETs TIONS VDS = 0, VQS--20V T= 150°C 2N5361 MIN MAX -100 -100 2N5362 MIN MAX -100 -100 2N5363 MIN MAX 100 -100 2N5364 MIN MAX 100 -100 UNITS pA nA Gate-Source Cutoff VGS(off) .. . Voltage BVGSS Gate-Source Breakdown Voitage 'DSS Vqs Saturation |
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National Semiconductor |
N-Channel JFETs ation Drain Current Common-Source Forward Transconductance Common-Source Output 9os Conductance Re Wfs> Common-Source Forward Transconductance Re (Vos) Common-Source Output Conductance Re lvisl Qss Common-Source Input Conductance Common-Source |
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National Semiconductor |
N-Channel JFETs TIONS VDS = 0, VQS--20V T= 150°C 2N5361 MIN MAX -100 -100 2N5362 MIN MAX -100 -100 2N5363 MIN MAX 100 -100 2N5364 MIN MAX 100 -100 UNITS pA nA Gate-Source Cutoff VGS(off) .. . Voltage BVGSS Gate-Source Breakdown Voitage 'DSS Vqs Saturation |
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National Semiconductor |
N-Channel Monolithic Dual JFETs V DG - 20V, Dl - 200 jiA iDSS 9fs gfs gos gos C, ss C rss NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Output Conductance Common-Source Inp |
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National Semiconductor |
N-Channel Monolithic Dual JFET = -1pA,V DS =0 Vqs= 10V, Dl = 1 nA VDG = 10V, Dt = 30 ^A 'OSS 9fs 9os „ _ 9os NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacit |
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Desde 2024. D4U Semiconductor.
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