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Nanya Technology |
(NT5DSxxMxAx) 128Mb DDR333/300 SDRAM CAS Latency and Frequency Maximum Operating Frequency (MHz)* DDR333 DDR300 (-6) (-66) 2 133 133 2.5 166 150 * Values are nominal (exact tCK should be used). CAS Latency • Double data rate architecture: two data transfers per clock cycle • Bidirectio |
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Nanya Technology |
Fast Page Mode DRAM ....................................................................................................................................................................................................03 Product Family .................................... |
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Nanya Technology |
CMOS with Rxtended Data Out .......................................................................................................................................................................03 Product Family ................................................................. |
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Nanya Technology |
Fast Page Mode with EDO DRAM ................................................................................................3 3. Product Family........................................................................................3 4. Pin Configuration......................... |
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Nanya Technology |
1M x 16 SDRAM l l l l l l l l l l l l PC100 compliant functionality and performance. JEDEC standard 3.3 V ± 10% power supply. LVTTL compatible inputs and outputs. All inputs are sampled on positive edge of system clock. Dual Banks for hidden row access/precharge |
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Nanya Technology |
(NT56V1640A0T / NT56V1680A0T) 16M SDRAM |
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Nanya Technology |
(NT56V1640A0T / NT56V1680A0T) 16M SDRAM |
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Nanya Technology |
(NT5DSxxMxAx) 128Mb DDR333/300 SDRAM CAS Latency and Frequency Maximum Operating Frequency (MHz)* DDR333 DDR300 (-6) (-66) 2 133 133 2.5 166 150 * Values are nominal (exact tCK should be used). CAS Latency • Double data rate architecture: two data transfers per clock cycle • Bidirectio |
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Nanya Technology |
(NT5SVxxMxxBx) 256Mb SDRAM • High Performance: 6K 75B Units CL=3 CL=3 fCK tCK tAC tAC Clock Frequency Clock Cycle Clock Access Time1 Clock Access Time2 166 6 — 5 133 MHz 7.5 — 5.4 ns ns ns 1. Terminated load. See AC Characteristics on page 37 2. Unterminated load. See AC Char |
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Nanya Technology |
(NT5SVxxMxxBx) 256Mb SDRAM • High Performance: 6K 75B Units CL=3 CL=3 fCK tCK tAC tAC Clock Frequency Clock Cycle Clock Access Time1 Clock Access Time2 166 6 — 5 133 MHz 7.5 — 5.4 ns ns ns 1. Terminated load. See AC Characteristics on page 37 2. Unterminated load. See AC Char |
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Nanya Technology |
(NT5SVxxMxxBx) 256Mb SDRAM • High Performance: 6K 75B Units CL=3 CL=3 fCK tCK tAC tAC Clock Frequency Clock Cycle Clock Access Time1 Clock Access Time2 166 6 — 5 133 MHz 7.5 — 5.4 ns ns ns 1. Terminated load. See AC Characteristics on page 37 2. Unterminated load. See AC Char |
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Nanya Technology |
(NT5SVxxMxxBx) 256Mb SDRAM • High Performance: 6K 75B Units CL=3 CL=3 fCK tCK tAC tAC Clock Frequency Clock Cycle Clock Access Time1 Clock Access Time2 166 6 — 5 133 MHz 7.5 — 5.4 ns ns ns 1. Terminated load. See AC Characteristics on page 37 2. Unterminated load. See AC Char |
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Nanya Technology |
(NT5SVxxMxxBx) 256Mb SDRAM • High Performance: 6K 75B Units CL=3 CL=3 fCK tCK tAC tAC Clock Frequency Clock Cycle Clock Access Time1 Clock Access Time2 166 6 — 5 133 MHz 7.5 — 5.4 ns ns ns 1. Terminated load. See AC Characteristics on page 37 2. Unterminated load. See AC Char |
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Nanya Technology |
(NT5SVxxMxxBx) 256Mb SDRAM • High Performance: 6K 75B Units CL=3 CL=3 fCK tCK tAC tAC Clock Frequency Clock Cycle Clock Access Time1 Clock Access Time2 166 6 — 5 133 MHz 7.5 — 5.4 ns ns ns 1. Terminated load. See AC Characteristics on page 37 2. Unterminated load. See AC Char |
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Desde 2024. D4U Semiconductor.
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