| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Naina Semiconductor |
Power Surge Suppressor • Glass passivated junction • Zener type suppressor • Superior clamping ability • Metric and UNF thread type Mechanical Characteristics • Hermetically sealed DO-9 outline • External surfaces corrosion resistant & terminal Solderable • Weight: 16 gram |
|
|
|
|
Naina Semiconductor |
Thyristor-Thyristor • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 & M2 package 100 100NTT Maximum Ratings (TA = 250C unless otherwise n |
|
|
|
|
Naina Semiconductor |
(MBR8045 - MBR80100R) Schottky Power Diode • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity MBR8045 thru MBR80100R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Condition |
|
|
|
|
Naina Semiconductor |
Phase Control Thyristors • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance TO-209AC (TO-94) Voltage Ratings (TJ = 25oC, unless otherwise |
|
|
|
|
Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
|
|
|
|
Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
|
|
|
|
Naina Semiconductor |
Standard Recovery Diodes Diffused Series Industrial grade Available in Normal and Reverse polarity Metric and UNF thread type Electrical Specifications (TA = 25oC, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TC = |
|
|
|
|
Naina Semiconductor |
Three Phase Bridge Rectifier • Easy connections • Surge capability up to 500A • Low thermal resistance • High thermal conductivity • Electrically insulated case • Center hole fixing Three Phase Bridge Rectifier, 35A 36MT Voltage Ratings (TC = 25oC unless otherwise noted) Typ |
|
|
|
|
Naina Semiconductor |
SILICON POWER DIODES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS IF(AV) Maximum Average Forward Current Te=1400C Maximum peak forw |
|
|
|
|
Naina Semiconductor |
Power Surge Suppressor • Glass passivated junction • Zener type suppressor • Superior clamping ability • Metric and UNF thread type Mechanical Characteristics • Hermetically sealed DO-9 outline • External surfaces corrosion resistant & terminal Solderable • Weight: 16 gram |
|
|
|
|
Naina Semiconductor |
Power Surge Suppressor • Glass passivated junction • Zener type suppressor • Superior clamping ability • Metric and UNF thread type Mechanical Characteristics • Hermetically sealed DO-9 outline • External surfaces corrosion resistant & terminal Solderable • Weight: 16 gram |
|
|
|
|
Naina Semiconductor |
Power Surge Suppressor • Glass passivated junction • Zener type suppressor • Superior clamping ability • Metric and UNF thread type Mechanical Characteristics • Hermetically sealed DO-9 outline • External surfaces corrosion resistant & terminal Solderable • Weight: 16 gram |
|
|
|
|
Naina Semiconductor |
Power Surge Suppressor • Glass passivated junction • Zener type suppressor • Superior clamping ability • Metric and UNF thread type Mechanical Characteristics • Hermetically sealed DO-9 outline • External surfaces corrosion resistant & terminal Solderable • Weight: 16 gram |
|
|
|
|
Naina Semiconductor |
Power Surge Suppressor • Glass passivated junction • Zener type suppressor • Superior clamping ability • Metric and UNF thread type Mechanical Characteristics • Hermetically sealed DO-9 outline • External surfaces corrosion resistant & terminal Solderable • Weight: 16 gram |
|
|
|
|
Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 100 100NS(R) Standard andard Recovery Diodes (Stud and Flat Base Type) Electrical Specifications (TE = 250C, unless otherwise noted) Symbo |
|
|
|
|
Naina Semiconductor |
Thyristor-Diode • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 & M2 package 100 100NTD Maximum Ratings (TA = 250C unless otherwise n |
|
|
|
|
Naina Semiconductor |
(MBR6045 - MBR60100R) Schottky Power Diode • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity MBR6045 thru MBR60100R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Condition |
|
|
|
|
Naina Semiconductor |
(MBR12045CT - MBR120100CTR) Schottky Power Diode • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR12045CT thru MBR120100CTR Silicon Schottky Diode, 120A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Rep |
|
|
|
|
Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
|
|
|
|
Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
|
Desde 2024. D4U Semiconductor.
|