NXP Semiconductors SA5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	SA58670	NXP Semiconductors	2.1 W/channel stereo class-D audio amplifier independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectiﬁcation is increased by high PSRR and differential circuit topology. Fast start
2	SA58670ABS	NXP Semiconductors	2.1 W/channel stereo class-D audio amplifier independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectiﬁcation is increased by high PSRR and differential circuit topology. Fast start
3	SA56004x	NXP Semiconductors	remote/local digital temperature sensor • Accurately senses temperature of remote microprocessor thermal • On-chip local temperature sensing • 11-bit, 0.125 °C resolution • 8 different device addresses are available for server applications. • Offset registers available for adjusting the r
4	SA58640	NXP Semiconductors	Low-voltage mixer FM-IF and benefits Low power consumption: 5.0 mA typical at 5 V Mixer input to >100 MHz Mixer conversion power gain of 17 dB at 45 MHz Crystal oscillator effective to 100 MHz (LC oscillator or external oscillator can be used at higher frequencies)
5	SA58670A	NXP Semiconductors	2.1 W/channel stereo class-D audio amplifier independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectiﬁcation is increased by high PSRR and differential circuit topology. Fast start
6	SA58672	NXP Semiconductors	3.0W mono class-D audio amplifier shutdown control. Improved immunity to noise and RF rectiﬁcation is increased by high PSRR and differential circuit topology. Fast start-up time and very small WLCSP package makes it an ideal choice for both cellular handsets and PDAs. The SA58672 de
7	SA58672TK	NXP Semiconductors	3.0W mono class-D audio amplifier shutdown control. Improved immunity to noise and RF rectiﬁcation is increased by high PSRR and differential circuit topology. Fast start-up time and very small WLCSP package makes it an ideal choice for both cellular handsets and PDAs. The SA58672 de
8	SA58672UK	NXP Semiconductors	3.0W mono class-D audio amplifier shutdown control. Improved immunity to noise and RF rectiﬁcation is increased by high PSRR and differential circuit topology. Fast start-up time and very small WLCSP package makes it an ideal choice for both cellular handsets and PDAs. The SA58672 de
9	SA58640DK	NXP Semiconductors	Low-voltage mixer FM-IF and benefits Low power consumption: 5.0 mA typical at 5 V Mixer input to >100 MHz Mixer conversion power gain of 17 dB at 45 MHz Crystal oscillator effective to 100 MHz (LC oscillator or external oscillator can be used at higher frequencies)