No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP Semiconductors |
N-channel TrenchMOS standard level FET I Standard level threshold I Very low thermal impedance I Low profile and small footprint I Low on-state resistance 1.3 Applications I Primary side switching I DC-to-DC converters 1.4 Quick reference data I VDS ≤ 220 V I RDSon ≤ 386 mΩ I ID ≤ 7.3 A |
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NXP Semiconductors |
High-speed switching diodes and benefits High switching speed: trr ≤ 4 ns Reverse voltage: VR ≤ 75 V Repetitive peak reverse voltage: VRRM ≤ 100 V Repetitive peak forward current: IFRM ≤ 450 mA Small hermetically sealed glass SMD package 1.3 Applications High-speed |
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NXP Semiconductors |
High-speed switching diodes and benefits High switching speed: trr ≤ 4 ns Reverse voltage: VR ≤ 75 V Repetitive peak reverse voltage: VRRM ≤ 100 V Repetitive peak forward current: IFRM ≤ 450 mA Small hermetically sealed glass SMD package 1.3 Applications High-speed |
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